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dc.contributor.authorKyratsi, Theodoraen
dc.contributor.authorDyck, J. S.en
dc.contributor.authorChen, W.en
dc.contributor.authorChung, D. Y.en
dc.contributor.authorUher, C.en
dc.contributor.authorParaskevopoulos, K. M.en
dc.contributor.authorKanatzidis, M. G.en
dc.creatorKyratsi, Theodoraen
dc.creatorDyck, J. S.en
dc.creatorChen, W.en
dc.creatorChung, D. Y.en
dc.creatorUher, C.en
dc.creatorParaskevopoulos, K. M.en
dc.creatorKanatzidis, M. G.en
dc.date.accessioned2019-05-06T12:24:00Z
dc.date.available2019-05-06T12:24:00Z
dc.date.issued2002
dc.identifier.urihttp://gnosis.library.ucy.ac.cy/handle/7/48557
dc.description.abstractThe thermoelectric properties of solid solutions of the type β-K 2Bi 8-xSb xSe 13 (0<x<8) were studied with respect to thermal behavior, band gap variation, and charge transport properties as a function of x. At x values between 0 and 1.5, the energy band gap is observed to decrease (anomalous) before it widens with increasing x values as would be expected. For selected members of the solid solutions, the Bridgman technique was applied to obtain well-grown oriented ingots that were used to measure the thermal conductivity and charge transport properties in different growth directions. The measurements showed a strong anisotropy in thermoelectric properties with the largest anisotropy observed in the electrical conductivity. Lattice thermal conductivities of the selected solid solutions were observed to decrease when the x value increases. Preliminary doping studies on the x=1.6 member were carried out and it was shown that it is possible to significantly increase the power factor. © 2002 American Institute of Physics.en
dc.language.isoengen
dc.sourceJournal of Applied Physicsen
dc.subjectEnergy gapen
dc.subjectAnisotropyen
dc.subjectElectric conductivityen
dc.subjectThermal conductivityen
dc.subjectThermoelectricityen
dc.subjectSolid solutionsen
dc.subjectTransport propertiesen
dc.subjectCrystal growthen
dc.subjectThermoelectric propertiesen
dc.subjectLattice thermal conductivityen
dc.subjectThermoelectric equipmenten
dc.subjectElectric power factoren
dc.subjectAnisotropic crystal growthen
dc.subjectBand gap variationen
dc.subjectBridgman techniquesen
dc.subjectElectrical conductivityen
dc.subjectGrowth directionsen
dc.subjectMetal castingsen
dc.subjectPower factorsen
dc.subjectStrong anisotropyen
dc.subjectThermal behaviorsen
dc.titleHighly anisotropic crystal growth and thermoelectric properties of K 2Bi 8-xSb xSe 13 solid solutions: Band gap anomaly at low xen
dc.typeinfo:eu-repo/semantics/article
dc.identifier.doi10.1063/1.1481967
dc.description.volume92
dc.description.startingpage965
dc.description.endingpage975
dc.author.facultyΠολυτεχνική Σχολή / Faculty of Engineering
dc.author.departmentΤμήμα Μηχανικών Μηχανολογίας και Κατασκευαστικής / Department of Mechanical and Manufacturing Engineering
dc.type.uhtypeArticleen
dc.contributor.orcidKyratsi, Theodora [0000-0003-2916-1708]
dc.description.totalnumpages965-975


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