dc.contributor.author | Kyratsi, Theodora | en |
dc.contributor.author | Hatzikraniotis, E. | en |
dc.contributor.author | Paraskevopoulos, K. M. | en |
dc.contributor.author | Chrissafis, K. | en |
dc.creator | Kyratsi, Theodora | en |
dc.creator | Hatzikraniotis, E. | en |
dc.creator | Paraskevopoulos, K. M. | en |
dc.creator | Chrissafis, K. | en |
dc.date.accessioned | 2019-05-06T12:24:01Z | |
dc.date.available | 2019-05-06T12:24:01Z | |
dc.date.issued | 1997 | |
dc.identifier.uri | http://gnosis.library.ucy.ac.cy/handle/7/48561 | |
dc.description.abstract | Bi2Se3 and Bi2Te3 are layered semiconductors n-type and p-type, respectively, which belong to the family of thermoelectric materials. In this work we examine the insertion of Cu in Bi 2Te3 and Bi2Se3 single crystals through an intercalation reaction. The inserted Cu acting as donor enhances the n-type character of Bi2Se3 while changing the native p-type character of Bi2Te3 to n-type. The spatial distribution of the intercalated species was monitoring by X-ray microanalysis and microscopic IR reflectivity measurements. | en |
dc.language.iso | eng | en |
dc.source | Ionics | en |
dc.title | Changes in the electronic properties of Bi2X3 (X: Se, Te) single crystals due to intercalation | en |
dc.type | info:eu-repo/semantics/article | |
dc.identifier.doi | 10.1007/BF02375635 | |
dc.description.volume | 3 | |
dc.description.startingpage | 305 | |
dc.description.endingpage | 309 | |
dc.author.faculty | Πολυτεχνική Σχολή / Faculty of Engineering | |
dc.author.department | Τμήμα Μηχανικών Μηχανολογίας και Κατασκευαστικής / Department of Mechanical and Manufacturing Engineering | |
dc.type.uhtype | Article | en |
dc.contributor.orcid | Kyratsi, Theodora [0000-0003-2916-1708] | |
dc.description.totalnumpages | 305-309 | |
dc.gnosis.orcid | 0000-0003-2916-1708 | |