Doping and alloying trends in new thermoelectric materials
Chung, D. Y.
Hsu, K. F.
Kanatzidis, M. G.
Hogan, T. P.
PublisherAffiliation: Dept. of Elec. and Comp. Engineering, Michigan State University, East Lansing, MI, United States
Correspondence Address: Loo, S.
Dept. of Elec. and Comp. Engineering, Michigan State University, East Lansing, MI, United States
SourceMaterials Research Society Symposium - Proceedings
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New thermoelectric bulk materials such as CsBi4Te6 have shown superior properties to traditional materials, however, optimal performance requires continuing investigations of doping and alloying trends. A recently modified throughput measurement system is presented for doping and alloying investigations in several new thermoelectric materials. The modification includes a four-probe configuration for more accurate measurements while maintaining a relatively short sample preparation time. The system is fully computer controlled and provides flexible contacts to accommodate various sample dimensions. Optimal compositions are then identified for further investigations in thermoelectric prototype modules. The most promising materials will be further characterized for electrical conductivity, thermoelectric power, thermal conductivity, and Hall effect measurements as a function of temperature.