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dc.contributor.authorMai, V. H.en
dc.contributor.authorMoradpour, A.en
dc.contributor.authorSenzier, P. A.en
dc.contributor.authorPasquier, C.en
dc.contributor.authorWang, K.en
dc.contributor.authorRozenberg, M. J.en
dc.contributor.authorGiapintzakis, Johnen
dc.contributor.authorMihailescu, C. N.en
dc.contributor.authorOrfanidou, C. M.en
dc.contributor.authorSvoukis, E.en
dc.contributor.authorBreza, A.en
dc.contributor.authorLioutas, C. B.en
dc.contributor.authorFranger, S.en
dc.contributor.authorRevcolevschi, A.en
dc.contributor.authorMaroutian, T.en
dc.contributor.authorLecoeur, P.en
dc.contributor.authorAubert, P.en
dc.contributor.authorAgnus, G.en
dc.contributor.authorSalot, R.en
dc.contributor.authorAlbouy, P. A.en
dc.contributor.authorWeil, R.en
dc.contributor.authorAlamarguy, D.en
dc.contributor.authorMarch, K.en
dc.contributor.authorJomard, F.en
dc.contributor.authorChrétien, P.en
dc.contributor.authorSchneegans, O.en
dc.creatorMai, V. H.en
dc.creatorMoradpour, A.en
dc.creatorSenzier, P. A.en
dc.creatorPasquier, C.en
dc.creatorWang, K.en
dc.creatorRozenberg, M. J.en
dc.creatorGiapintzakis, Johnen
dc.creatorMihailescu, C. N.en
dc.creatorOrfanidou, C. M.en
dc.creatorSvoukis, E.en
dc.creatorBreza, A.en
dc.creatorLioutas, C. B.en
dc.creatorFranger, S.en
dc.creatorRevcolevschi, A.en
dc.creatorMaroutian, T.en
dc.creatorLecoeur, P.en
dc.creatorAubert, P.en
dc.creatorAgnus, G.en
dc.creatorSalot, R.en
dc.creatorAlbouy, P. A.en
dc.creatorWeil, R.en
dc.creatorAlamarguy, D.en
dc.creatorMarch, K.en
dc.creatorJomard, F.en
dc.creatorChrétien, P.en
dc.creatorSchneegans, O.en
dc.date.accessioned2019-05-06T12:24:07Z
dc.date.available2019-05-06T12:24:07Z
dc.date.issued2015
dc.identifier.urihttp://gnosis.library.ucy.ac.cy/handle/7/48612
dc.description.abstractThe phenomenon of resistive switching (RS), which was initially linked to non-volatile resistive memory applications, has recently also been associated with the concept of memristors, whose adjustable multilevel resistance characteristics open up unforeseen perspectives in cognitive computing. Herein, we demonstrate that the resistance states of LixCoO2 thin film-based metal-insulator-metal (MIM) solid-state cells can be tuned by sequential programming voltage pulses, and that these resistance states are dramatically dependent on the pulses input rate, hence emulating biological synapse plasticity. In addition, we identify the underlying electrochemical processes of RS in our MIM cells, which also reveal a nanobattery-like behavior, leading to the generation of electrical signals that bring an unprecedented new dimension to the connection between memristors and neuromorphic systems. Therefore, these LixCoO2-based MIM devices allow for a combination of possibilities, offering new perspectives of usage in nanoelectronics and bio-inspired neuromorphic circuits.en
dc.language.isoengen
dc.sourceScientific Reportsen
dc.titleMemristive and neuromorphic behavior in a Li x CoO 2 nanobatteryen
dc.typeinfo:eu-repo/semantics/article
dc.identifier.doi10.1038/srep07761
dc.description.volume5
dc.author.facultyΠολυτεχνική Σχολή / Faculty of Engineering
dc.author.departmentΤμήμα Μηχανικών Μηχανολογίας και Κατασκευαστικής / Department of Mechanical and Manufacturing Engineering
dc.type.uhtypeArticleen
dc.contributor.orcidGiapintzakis, John [0000-0002-7277-2662]


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