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dc.contributor.authorOrfanidou, C. M.en
dc.contributor.authorGiapintzakis, Johnen
dc.creatorOrfanidou, C. M.en
dc.creatorGiapintzakis, Johnen
dc.date.accessioned2019-05-06T12:24:14Z
dc.date.available2019-05-06T12:24:14Z
dc.date.issued2013
dc.identifier.urihttp://gnosis.library.ucy.ac.cy/handle/7/48664
dc.description.abstractSilicon-on-insulator (SoI) devices are particularly interesting for thermal management studies as they suffer from severe self-heating because of the very low and isotropic thermal conductivity of silicon dioxide that is being used as a buried oxide (BOX) layer. La5Ca9Cu24O 41 (LCCO) exhibits highly anisotropic magnon-mediated thermal conductivity while at the same time is electrically insulating. A series of simulation studies has been carried out that deal with the design of an effective thermal management solution for transistors built on extremely thin SoI wafers with an LCCO BOX layer. It is shown that a heat channeling effect is produced, which can result in a significant reduction of the transistor operating temperature, the magnitude of which depends on the thickness of the BOX layer. © 2013 IEEE.en
dc.language.isoengen
dc.sourceIEEE Transactions on Electron Devicesen
dc.subjectThermal conductivityen
dc.subjectCalciumen
dc.subjectHeat transporten
dc.subjectOperating temperatureen
dc.subjectTemperature controlen
dc.subjectBuried oxide layersen
dc.subjectConduction coolingen
dc.subjectConduction-coolingen
dc.subjectExtremely thin silicon-oninsulator (ETSoI)en
dc.subjectHeat channelingen
dc.subjectHot spoten
dc.subjectLa5Ca9Cu24O41 (LCCO)en
dc.subjectMagnon heat transporten
dc.subjectSilicon on insulator technologyen
dc.subjectSilicon-on-insulator devicesen
dc.subjectSilicon-on-insulatorsen
dc.subjectSimulation studiesen
dc.subjectThermal managementen
dc.titleHeat channeling in extremely thin silicon-on-insulator devices: A simulation studyen
dc.typeinfo:eu-repo/semantics/article
dc.identifier.doi10.1109/TED.2013.2279311
dc.description.volume60
dc.description.startingpage3330
dc.description.endingpage3334
dc.author.facultyΠολυτεχνική Σχολή / Faculty of Engineering
dc.author.departmentΤμήμα Μηχανικών Μηχανολογίας και Κατασκευαστικής / Department of Mechanical and Manufacturing Engineering
dc.type.uhtypeArticleen
dc.contributor.orcidGiapintzakis, John [0000-0002-7277-2662]
dc.description.totalnumpages3330-3334


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