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dc.contributor.authorParamês, M. L.en
dc.contributor.authorViskadourakis, Z.en
dc.contributor.authorGiapintzakis, Johnen
dc.contributor.authorRogalski, M. S.en
dc.contributor.authorConde, O.en
dc.creatorParamês, M. L.en
dc.creatorViskadourakis, Z.en
dc.creatorGiapintzakis, Johnen
dc.creatorRogalski, M. S.en
dc.creatorConde, O.en
dc.date.accessioned2019-05-06T12:24:19Z
dc.date.available2019-05-06T12:24:19Z
dc.date.issued2007
dc.identifier.urihttp://gnosis.library.ucy.ac.cy/handle/7/48705
dc.description.abstractMagnetotransport properties of magnetite thin films deposited on gallium arsenide and sapphire substrates at growth temperatures between 473 and 673 K are presented. The films were grown by UV pulsed laser ablation in reactive atmospheres of O2 and Ar, at working pressure of 8 × 10-2 Pa. Film stoichiometry was determined in the range from Fe2.95O4 to Fe2.97O4. Randomly oriented polycrystalline thin films were grown on GaAs(1 0 0) while for the Al2O3(0 0 0 1) substrates the films developed a (1 1 1) preferred orientation. Interfacial Fe3+ diffusion was found for both substrates affecting the magnetic behaviour. The temperature dependence of the resistance and magnetoresistance of the films were measured for fields up to 6 T. Negative magnetoresistance values of ∼5% at room temperature and ∼10% at 90 K were obtained for the as-deposited magnetite films either on GaAs(1 0 0) or Al2O3(0 0 0 1). © 2007 Elsevier B.V. All rights reserved.en
dc.language.isoengen
dc.sourceApplied Surface Scienceen
dc.subjectFilm growthen
dc.subjectPulsed laser depositionen
dc.subjectMagnetoresistanceen
dc.subjectThin filmsen
dc.subjectSemiconducting gallium arsenideen
dc.subjectSapphireen
dc.subjectAluminum compoundsen
dc.subjectFe3O4 thin filmsen
dc.subjectFilm stoichiometryen
dc.subjectGallium arsenideen
dc.subjectPLDen
dc.subjectRandomly oriented polycrystalline thin filmsen
dc.titleMagnetoresistance of magnetite thin films grown by pulsed laser deposition on GaAs(1 0 0) and Al2O3(0 0 0 1)en
dc.typeinfo:eu-repo/semantics/article
dc.identifier.doi10.1016/j.apsusc.2007.08.073
dc.description.volume254
dc.description.startingpage1255
dc.description.endingpage1259
dc.author.facultyΠολυτεχνική Σχολή / Faculty of Engineering
dc.author.departmentΤμήμα Μηχανικών Μηχανολογίας και Κατασκευαστικής / Department of Mechanical and Manufacturing Engineering
dc.type.uhtypeArticleen
dc.contributor.orcidGiapintzakis, John [0000-0002-7277-2662]
dc.description.totalnumpages1255-1259


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