dc.contributor.author | Paramês, M. L. | en |
dc.contributor.author | Viskadourakis, Z. | en |
dc.contributor.author | Giapintzakis, John | en |
dc.contributor.author | Rogalski, M. S. | en |
dc.contributor.author | Conde, O. | en |
dc.creator | Paramês, M. L. | en |
dc.creator | Viskadourakis, Z. | en |
dc.creator | Giapintzakis, John | en |
dc.creator | Rogalski, M. S. | en |
dc.creator | Conde, O. | en |
dc.date.accessioned | 2019-05-06T12:24:19Z | |
dc.date.available | 2019-05-06T12:24:19Z | |
dc.date.issued | 2007 | |
dc.identifier.uri | http://gnosis.library.ucy.ac.cy/handle/7/48705 | |
dc.description.abstract | Magnetotransport properties of magnetite thin films deposited on gallium arsenide and sapphire substrates at growth temperatures between 473 and 673 K are presented. The films were grown by UV pulsed laser ablation in reactive atmospheres of O2 and Ar, at working pressure of 8 × 10-2 Pa. Film stoichiometry was determined in the range from Fe2.95O4 to Fe2.97O4. Randomly oriented polycrystalline thin films were grown on GaAs(1 0 0) while for the Al2O3(0 0 0 1) substrates the films developed a (1 1 1) preferred orientation. Interfacial Fe3+ diffusion was found for both substrates affecting the magnetic behaviour. The temperature dependence of the resistance and magnetoresistance of the films were measured for fields up to 6 T. Negative magnetoresistance values of ∼5% at room temperature and ∼10% at 90 K were obtained for the as-deposited magnetite films either on GaAs(1 0 0) or Al2O3(0 0 0 1). © 2007 Elsevier B.V. All rights reserved. | en |
dc.language.iso | eng | en |
dc.source | Applied Surface Science | en |
dc.subject | Film growth | en |
dc.subject | Pulsed laser deposition | en |
dc.subject | Magnetoresistance | en |
dc.subject | Thin films | en |
dc.subject | Semiconducting gallium arsenide | en |
dc.subject | Sapphire | en |
dc.subject | Aluminum compounds | en |
dc.subject | Fe3O4 thin films | en |
dc.subject | Film stoichiometry | en |
dc.subject | Gallium arsenide | en |
dc.subject | PLD | en |
dc.subject | Randomly oriented polycrystalline thin films | en |
dc.title | Magnetoresistance of magnetite thin films grown by pulsed laser deposition on GaAs(1 0 0) and Al2O3(0 0 0 1) | en |
dc.type | info:eu-repo/semantics/article | |
dc.identifier.doi | 10.1016/j.apsusc.2007.08.073 | |
dc.description.volume | 254 | |
dc.description.startingpage | 1255 | |
dc.description.endingpage | 1259 | |
dc.author.faculty | Πολυτεχνική Σχολή / Faculty of Engineering | |
dc.author.department | Τμήμα Μηχανικών Μηχανολογίας και Κατασκευαστικής / Department of Mechanical and Manufacturing Engineering | |
dc.type.uhtype | Article | en |
dc.contributor.orcid | Giapintzakis, John [0000-0002-7277-2662] | |
dc.description.totalnumpages | 1255-1259 | |
dc.gnosis.orcid | 0000-0002-7277-2662 | |