| dc.contributor.author | Urazhdin, S. | en |
| dc.contributor.author | Bilc, D. I. | en |
| dc.contributor.author | Mahanti, S. D. | en |
| dc.contributor.author | Tessmer, S. H. | en |
| dc.contributor.author | Kyratsi, Theodora | en |
| dc.contributor.author | Kanatzidis, M. G. | en |
| dc.creator | Urazhdin, S. | en |
| dc.creator | Bilc, D. I. | en |
| dc.creator | Mahanti, S. D. | en |
| dc.creator | Tessmer, S. H. | en |
| dc.creator | Kyratsi, Theodora | en |
| dc.creator | Kanatzidis, M. G. | en |
| dc.date.accessioned | 2019-05-06T12:24:46Z | |
| dc.date.available | 2019-05-06T12:24:46Z | |
| dc.date.issued | 2004 | |
| dc.identifier.uri | http://gnosis.library.ucy.ac.cy/handle/7/48910 | |
| dc.description.abstract | Scanning tunneling spectroscopy of Bi2Se3 and Bi2Te3 layered narrow gap semiconductors reveals finite in-gap density of states and suppressed conduction in the energy range of high valence-band states. Electronic structure calculations suggest that the surface effects are responsible for these properties. Conversely, the interlayer coupling has a strong effect on the bulk near-gap electronic structure. These properties may prove to be important for the thermoelectric performance of these and other related chalcogenides. © 2004 The American Physical Society. | en |
| dc.language.iso | eng | en |
| dc.source | Physical Review B - Condensed Matter and Materials Physics | en |
| dc.title | Surface effects in layered semiconductors Bi2Se3 and Bi2Te3 | en |
| dc.type | info:eu-repo/semantics/article | |
| dc.identifier.doi | 10.1103/PhysRevB.69.085313 | |
| dc.description.volume | 69 | |
| dc.author.faculty | Πολυτεχνική Σχολή / Faculty of Engineering | |
| dc.author.department | Τμήμα Μηχανικών Μηχανολογίας και Κατασκευαστικής / Department of Mechanical and Manufacturing Engineering | |
| dc.type.uhtype | Article | en |
| dc.contributor.orcid | Kyratsi, Theodora [0000-0003-2916-1708] | |
| dc.gnosis.orcid | 0000-0003-2916-1708 | |
