dc.contributor.author | Viskadourakis, Z. | en |
dc.contributor.author | Paramês, M. L. | en |
dc.contributor.author | Conde, O. | en |
dc.contributor.author | Zervos, Matthew | en |
dc.contributor.author | Giapintzakis, John | en |
dc.creator | Viskadourakis, Z. | en |
dc.creator | Paramês, M. L. | en |
dc.creator | Conde, O. | en |
dc.creator | Zervos, Matthew | en |
dc.creator | Giapintzakis, John | en |
dc.date.accessioned | 2019-05-06T12:24:47Z | |
dc.date.available | 2019-05-06T12:24:47Z | |
dc.date.issued | 2012 | |
dc.identifier.uri | http://gnosis.library.ucy.ac.cy/handle/7/48917 | |
dc.description.abstract | The thermoelectric and transport properties of a Fe3O4/SiO2/p-Si(100) heterostructure have been investigated between 100 and 300 K. Both Hall and Seebeck coefficients change sign from negative to positive with increasing temperature while the resistivity drops sharply due to tunneling of carriers into the p-Si(100). The low resistivity and large Seebeck coefficient of Si give a very high thermoelectric power factor of 25.5 mW/K2m at 260 K which is an underestimated, lower limit value and is related to the density of states and difference in the work functions of Fe3O4 and Si(100) that create an accumulation of majority holes at the p-Si/SiO2 interface. ABSTRACT FROM AUTHOR] | en |
dc.description.abstract | Copyright of Applied Physics Letters is the property of American Institute of Physics and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | en |
dc.source | Applied Physics Letters | en |
dc.subject | RESEARCH | en |
dc.subject | ELECTRIC power factor | en |
dc.subject | HETEROSTRUCTURES | en |
dc.subject | METALS – Transport properties | en |
dc.subject | TEMPERATURE | en |
dc.subject | THERMOELECTRICITY | en |
dc.title | Very high thermoelectric power factor in a Fe3O4/SiO2/p-type Si(100) heterostructure | en |
dc.type | info:eu-repo/semantics/article | |
dc.identifier.doi | 10.1063/1.4737409 | |
dc.description.volume | 101 | |
dc.description.startingpage | 33505 | |
dc.description.endingpage | 33505 | |
dc.author.faculty | Πολυτεχνική Σχολή / Faculty of Engineering | |
dc.author.department | Τμήμα Μηχανικών Μηχανολογίας και Κατασκευαστικής / Department of Mechanical and Manufacturing Engineering | |
dc.type.uhtype | Article | en |
dc.contributor.orcid | Zervos, Matthew [0000-0002-6321-233X] | |
dc.contributor.orcid | Giapintzakis, John [0000-0002-7277-2662] | |
dc.description.totalnumpages | 033505-033505-4 | |
dc.gnosis.orcid | 0000-0002-6321-233X | |
dc.gnosis.orcid | 0000-0002-7277-2662 | |