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dc.contributor.authorZervos, Matthewen
dc.creatorZervos, Matthewen
dc.date.accessioned2019-05-06T12:24:52Z
dc.date.available2019-05-06T12:24:52Z
dc.date.issued2003
dc.identifier.urihttp://gnosis.library.ucy.ac.cy/handle/7/48955
dc.description.abstractThe article discusses the investigation of spin-polarized resonant tunneling through double barrier magnetic tunnel junctions (DBMTJ) by the self-consistent solution of Poissons and Schrödingers equations using transfer matrix method. It was found that the band bending occurs in the devices when resonant states exist between the quasi Fermi levels of the outer contacts and are shifted higher in energy thereby reducing the tunnel magnetoresistance (TMR). It was also found that while the estimates of the TMR can be as high as 90% by taking a linear variation of the potential through the device, they are reduced by almost 50% due to band bending.en
dc.language.isoengen
dc.sourceJournal of Applied Physicsen
dc.subjectMatrix algebraen
dc.subjectFerromagnetic materialsen
dc.subjectMagnetic tunnel junctions (MTJ)en
dc.subjectMagnetoresistanceen
dc.subjectSemiconductor quantum wellsen
dc.subjectPoisson equationen
dc.subjectFermi levelen
dc.subjectElectron tunnelingen
dc.subjectElectric insulatorsen
dc.titleInvestigation of spin-polarized resonant tunneling through double-barrier magnetic tunnel junctions by self-consistent solution of the Poisson-Schrödinger equationsen
dc.typeinfo:eu-repo/semantics/article
dc.identifier.doi10.1063/1.1579111
dc.description.volume94
dc.description.startingpage1776
dc.description.endingpage1782
dc.author.facultyΠολυτεχνική Σχολή / Faculty of Engineering
dc.author.departmentΤμήμα Μηχανικών Μηχανολογίας και Κατασκευαστικής / Department of Mechanical and Manufacturing Engineering
dc.type.uhtypeArticleen
dc.contributor.orcidZervos, Matthew [0000-0002-6321-233X]
dc.description.totalnumpages1776-1782


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