Investigation of spin-polarized resonant tunneling through double-barrier magnetic tunnel junctions by self-consistent solution of the Poisson-Schrödinger equations

Abstract

The article discusses the investigation of spin-polarized resonant tunneling through double barrier magnetic tunnel junctions (DBMTJ) by the self-consistent solution of Poissons and Schrödingers equations using transfer matrix method. It was found that the band bending occurs in the devices when resonant states exist between the quasi Fermi levels of the outer contacts and are shifted higher in energy thereby reducing the tunnel magnetoresistance (TMR). It was also found that while the estimates of the TMR can be as high as 90% by taking a linear variation of the potential through the device, they are reduced by almost 50% due to band bending.