Current transport and thermoelectric properties of very high power factor Fe3O4/SiO2/p-type Si(001) devices
Date
2014Source
Journal of Applied PhysicsVolume
115Pages
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The current transport and thermoelectric properties of Fe3O4/SiO2/p-type Si(001) heterostructures with Fe3O4 thicknesses of 150, 200, and 350 nm have been investigated between 100 and 300K. We observe a sharp drop of the in-plane resistivity at 200K due to the onset of conduction along the Si/SiO2 interface related to tunneling of electrons from the Fe3O4 into the accumulation layer of holes at the Si/SiO2 interface, whose existence was confirmed by capacitance-voltage measurements and a two band analysis of the Hall effect. This is accompanied by a large increase of the Seebeck coefficient reaching +1000 µV/K at 300K that is related to holes in the p-type Si(001) and gives a power factor of 70 mW/K²m when the Fe3O4 layer thickness is reduced down to 150 nm. We show that most of the current flows in the Fe3O4 layer at 300K, while the Fe3O4/SiO2/p-type Si(001) heterostructures behave like tunneling p-n junctions in the transverse direction. ABSTRACT FROM AUTHOR] Copyright of Journal of Applied Physics is the property of American Institute of Physics and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)