Arsenic implanted silicon by transport effect. Thermal annealing influence
Date
1987Source
Revue de Physique AppliqueeVolume
22Issue
6Pages
407-412Google Scholar check
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A study of the effects of thermal annealing on the transport properties in arsenic implanted silicon films is reported. In particular, the sheet resistance and the Hall mobility obtained by the Van der Pauw method is measured as a function of temperature (77 K to 300 K) on N+/N non annealed and isothermally annealed samples between 300 0 C to 1100 0 C. The activation energy of the recovery process of the ionic implantation damages found on the order to 0.65 eV is likely attributed to a local reconstruction of the layer. Around 420 0 C, ...