| dc.contributor.author | Christofides, Constantinos | en |
| dc.contributor.author | G Ghibaudo | en |
| dc.contributor.author | H Jaouen | en |
| dc.creator | Christofides, Constantinos | en |
| dc.creator | G Ghibaudo | en |
| dc.creator | H Jaouen | en |
| dc.date.accessioned | 2019-12-02T15:29:55Z | |
| dc.date.available | 2019-12-02T15:29:55Z | |
| dc.date.issued | 1987 | |
| dc.identifier.uri | http://gnosis.library.ucy.ac.cy/handle/7/58593 | |
| dc.description.abstract | A study of the effects of thermal annealing on the transport properties in arsenic implanted silicon films is reported. In particular, the sheet resistance and the Hall mobility obtained by the Van der Pauw method is measured as a function of temperature (77 K to 300 K) on N+/N non annealed and isothermally annealed samples between 300 0 C to 1100 0 C. The activation energy of the recovery process of the ionic implantation damages found on the order to 0.65 eV is likely attributed to a local reconstruction of the layer. Around 420 0 C, ... | en |
| dc.source | Revue de Physique Appliquee | fr |
| dc.title | Arsenic implanted silicon by transport effect. Thermal annealing influence | en |
| dc.type | info:eu-repo/semantics/article | |
| dc.description.volume | 22 | |
| dc.description.issue | 6 | |
| dc.description.startingpage | 407 | |
| dc.description.endingpage | 412 | |
| dc.author.faculty | Σχολή Θετικών και Εφαρμοσμένων Επιστημών / Faculty of Pure and Applied Sciences | |
| dc.author.department | Τμήμα Φυσικής / Department of Physics | |
| dc.type.uhtype | Article | en |
| dc.contributor.orcid | Christofides, Constantinos [0000-0002-4020-4660] | |
| dc.gnosis.orcid | 0000-0002-4020-4660 | |
