Photothermal radiometric study of implanted semiconductors
Date
2000Source
Semiconductors and Electronic MaterialsVolume
4Google Scholar check
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Ion implantation is a key technological process in modern microelectronics introduced as an alternative to diffusion for the semiconductor doping process [1]. However, disadvantages result from ion implantation such as defect damage to the wafer. Therefore, ion implantation has to be followed by the annealing process in order for the semiconductor to recover its crystallinity and for the doping impurity to become electrically active [2]. In recent years, layers doped by ion implantation have been studied via numerous techniques such as ...