| dc.contributor.author | Christofides, Constantinos | en |
| dc.contributor.author | Nestoros, Marios | en |
| dc.contributor.author | Othonos, Andreas S. | en |
| dc.creator | Christofides, Constantinos | en |
| dc.creator | Nestoros, Marios | en |
| dc.creator | Othonos, Andreas S. | en |
| dc.date.accessioned | 2019-12-02T15:30:00Z | |
| dc.date.available | 2019-12-02T15:30:00Z | |
| dc.date.issued | 2000 | |
| dc.identifier.uri | http://gnosis.library.ucy.ac.cy/handle/7/58617 | |
| dc.description.abstract | Ion implantation is a key technological process in modern microelectronics introduced as an alternative to diffusion for the semiconductor doping process [1]. However, disadvantages result from ion implantation such as defect damage to the wafer. Therefore, ion implantation has to be followed by the annealing process in order for the semiconductor to recover its crystallinity and for the doping impurity to become electrically active [2]. In recent years, layers doped by ion implantation have been studied via numerous techniques such as ... | en |
| dc.source | Semiconductors and Electronic Materials | en |
| dc.title | Photothermal radiometric study of implanted semiconductors | en |
| dc.type | info:eu-repo/semantics/article | |
| dc.description.volume | 4 | |
| dc.author.faculty | Σχολή Θετικών και Εφαρμοσμένων Επιστημών / Faculty of Pure and Applied Sciences | |
| dc.author.department | Τμήμα Φυσικής / Department of Physics | |
| dc.type.uhtype | Article | en |
| dc.contributor.orcid | Othonos, Andreas S. [0000-0003-0016-9116] | |
| dc.contributor.orcid | Nestoros, Marios [0000-0002-2343-4771] | |
| dc.contributor.orcid | Christofides, Constantinos [0000-0002-4020-4660] | |
| dc.gnosis.orcid | 0000-0003-0016-9116 | |
| dc.gnosis.orcid | 0000-0002-2343-4771 | |
| dc.gnosis.orcid | 0000-0002-4020-4660 | |
