Photomodulated thermoreflectance investigation at elevated temperatures: plasma versus thermal effect
Date
2003ISSN
0003-6951Source
Applied Physics LettersVolume
82Issue
7Pages
1132-1134Google Scholar check
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Photomodulated thermoreflectance measurements were performed at elevated temperatures (294 to 623 K), on crystalline silicon lightly doped with boron. The temperature dependence is qualitatively and quantitatively discussed. The "competition" between thermal and plasma contribution, as a function of temperature, is one of the main subjects of this letter. (C) 2003 American Institute of Physics.