Show simple item record

Photomodulated thermoreflectance investigation at elevated temperatures: plasma versus thermal effect

dc.contributor.authorChristofides, Constantinosen
dc.contributor.authorOthonos, Andreas S.en
dc.contributor.authorLoizidou, Efien
dc.creatorChristofides, Constantinosen
dc.creatorOthonos, Andreas S.en
dc.creatorLoizidou, Efien
dc.date.accessioned2019-12-02T15:30:00Z
dc.date.available2019-12-02T15:30:00Z
dc.date.issued2003
dc.identifier.issn0003-6951
dc.identifier.urihttp://gnosis.library.ucy.ac.cy/handle/7/58619
dc.description.abstractPhotomodulated thermoreflectance measurements were performed at elevated temperatures (294 to 623 K), on crystalline silicon lightly doped with boron. The temperature dependence is qualitatively and quantitatively discussed. The "competition" between thermal and plasma contribution, as a function of temperature, is one of the main subjects of this letter. (C) 2003 American Institute of Physics.en
dc.sourceApplied Physics Lettersen
dc.subjectSILICONen
dc.subjectREFLECTANCEen
dc.titlePhotomodulated thermoreflectance investigation at elevated temperatures: plasma versus thermal effecten
dc.typeinfo:eu-repo/semantics/article
dc.identifier.doi10.1063/1.1541935
dc.description.volume82
dc.description.issue7
dc.description.startingpage1132
dc.description.endingpage1134
dc.author.facultyΣχολή Θετικών και Εφαρμοσμένων Επιστημών / Faculty of Pure and Applied Sciences
dc.author.departmentΤμήμα Φυσικής / Department of Physics
dc.type.uhtypeArticleen
dc.description.notes<p>PT: Jen
dc.description.notesTC: 1en
dc.description.notesJ9: APPL PHYS LETT</p>en
dc.source.abbreviationAppl.Phys.Lett.en
dc.contributor.orcidOthonos, Andreas S. [0000-0003-0016-9116]
dc.contributor.orcidChristofides, Constantinos [0000-0002-4020-4660]
dc.gnosis.orcid0000-0003-0016-9116
dc.gnosis.orcid0000-0002-4020-4660


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following Collection(s)

Show simple item record