Analysis of the transport process providing spin injection through an Fe/AlGaAs Schottky barrier
Date
2003Author
Hanbicki, A. T.Van't Erve, O. M. J.
Magno, R.
Kioseoglou, G.
Li, C. H.
Jonker, B. T.
Itskos, Grigorios
Mallory, R.
Yasar, M.
Petrou, Athos Chariton
Source
Applied Physics LettersVolume
82Issue
23Pages
4092-4094Google Scholar check
Keyword(s):
Metadata
Show full item recordAbstract
Electrical injection through a reverse biased Fe/AlGaAs Schottky contact was used to obtain electron-spin polarizations in a GaAs quantum well. The analysis of the transport data using the Rowell criteria shows that single-step tunneling is the dominant transport mechanism. The current-voltage data show a zero-bias anomaly and phonon signatures corresponding to the GaAs-like and AlAs-like LO phonon modes of the AlGaAs barrier.