Browsing by Subject "Heterojunctions"
Now showing items 1-19 of 19
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Article
4H-1,2,6-Thiadiazin-4-one-containing small molecule donors and additive effects on their performance in solution-processed organic solar cells
(2015)The optical, electrochemical, morphological and transport properties of a series of thiadiazinone (acceptor) and (thienyl)carbazoles (donor) containing π-extended donor-acceptor-donors (D-A-D) are presented. Systematic ...
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Article
Analysis of the transport process providing spin injection through an Fe/AlGaAs Schottky barrier
(2003)Electrical injection through a reverse biased Fe/AlGaAs Schottky contact was used to obtain electron-spin polarizations in a GaAs quantum well. The analysis of the transport data using the Rowell criteria shows that ...
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Conference Object
Electrical spin injection and band offsets in an n-type ferromagnetic semiconductor heterostructure: n-CdCr2Se4 / AlGaAs / GaAs
(2003)The electrical spin injection and band offsets in an n-type ferromagnetic semiconductor heterostructure were discussed. The electrical spin injection from spin-LED structures showed defect-dominated electroluminescence. ...
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Conference Object
Electrical spin injection and band offsets in an n-type ferromagnetic semiconductor heterostructure: n-CdCr2Se4/AlGaAs/GaAs
(Institute of Electrical and Electronics Engineers Inc., 2003)Electrical spin injection and band offsets in an n-type ferromagnetic semiconductor heterostructure of CdCr2Se4-AlGaAs-GaAs are studied. Epitaxially grown CdCr2Se4 films exhibit hysteresis behavior with significant remanence, ...
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Conference Object
Electrical spin injection from a magnetic schottky tunnel contact into a semiconductor
(2002)A report on the electrical spin injection from a magnetic Schottky tunnel contact into a semiconductor was presented. The temperature dependence of the optical polarization and corresponding spin injection efficiency was ...
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Article
Electron spin filtering in ferromagnet/semiconductor heterostructures
(2003)Circularly polarized light was used to generate spin-polarized electrons at room temperature in ferromagnet (FM)/GaAs Schottky diode structures. A change in the helicity-dependent photocurrent was obtained when the ...
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Article
Electronic structure of piezoelectric double-barrier InAs/InP/InAs/InP/InAs (111) nanowires
(2004)The numerical self-consistent solution of the Poisson-Schrodinger equations in cylindrical coordinates for calculating electronic states in the effective mass approximation was implemented. High accuracy and rapid convergence ...
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Article
Excitation dynamics of a low bandgap silicon-bridged dithiophene copolymer and its composites with fullerenes
(2012)We report on excitation dynamics in pristine and bulk heterojunction films of the low bandgap silicon-bridged dithiophene copolymer poly[(4,4′-bis(2- ethylhexyl)dithieno[3,2-b:2′, 3′-d]silole)-2,6-diyl-alt-(4,7-bis(2- ...
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Article
Förster resonant energy transfer from an inorganic quantum well to a molecular material: Unexplored aspects, losses, and implications to applications
(2015)A systematic investigation of Förster resonant energy transfer (FRET) is reported within a hybrid prototype structure based on nitride single quantum well (SQW) donors and light emitting polymer acceptors. Self-consistent ...
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Article
Hybrid inorganic/organic semiconductor heterostructures with efficient non-radiative energy transfer
(2006)A hybrid inorganic/organic semiconductor structure employing a polyfluorene thin films with Efficient non-radiative Förster resonant energy transfer (FRET) was fabricated. FRET is mediated by dipole-dipole interactions, ...
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Article
Hybrid polaritons in strongly coupled microcavities: Experiments and models
(2004)We describe the fabrication of one-dimensional quantum microcavities containing two different layers of molecular J-aggregates. We show that strong coupling can occur between the confined cavity photon mode and the two ...
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Article
Indium oxide as a possible tunnel barrier in spintronic devices
(2005)We report the growth of ultra-thin indium oxide layers using the dc-magnetron sputtering method. We demonstrate that good quality tunnel barriers made of indium oxide can be routinely fabricated and employed in spintronic-related ...
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Article
Inkjet printing processing conditions for bulk-heterojunction solar cells using two high-performing conjugated polymer donors
(2014)We report the processing conditions for inkjet-printed active layers of organic photovoltaic (OPV) devices comprising bulk-heterojunction blends of the low bandgap conjugated polymer poly[(4,4′-bis(2-ethylhexyl)dithieno[3,2-b: ...
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Article
Light-induced mobility enhancement in delta-doped GaAs/In0.26Ga0.74As/GaAs quantum wells grown by molecular beam epitaxy on GaAs(001)
(1999)Persistent photoconductivity in 80 angstroms strained GaAs/In0.26Ga0.74As/GaAs quantum wells was investigated by measuring the Shubnikov de Haas and Hall effects at 4.2 K. The quantum wells were grown by molecular beam ...
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Article
Photovoltaic limitations of BODIPY:fullerene based bulk heterojunction solar cells
(2017)The photovoltaic performance of blends of a series of 4,4′-Difluoro-4-bora-3a,4a-diaza-s-indacenes)-based (BODIPY) conjugated polymers donors with fullerene electron acceptors is investigated. Despite the high Voc values ...
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Article
Properties of Si-doped GaN and AlGaN/GaN heterostructures grown by RF-MBE on high resistivity Fe-doped GaN
(2006)Silicon-doped GaN epilayers and AlGaN/GaN heterostructures were developed by nitrogen plasma-assisted molecular beam epitaxy on high resistivity iron-doped GaN (0001) templates and their properties were investigated by ...
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Article
Size-dependent charge transfer in blends of Pbs quantum dots with a low-gap silicon-bridged copolymer
(2013)The photophysics of bulk heterojunctions of a high-performance, low-gap silicon-bridged dithiophene polymer with oleic acid capped PbS quantum dots (QDs) are studied to assess the material potential for light harvesting ...
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Article
Sn:In2O3 and Sn:In2O3/NiS2 Core-Shell Nanowires on Ni, Mo Foils and C Fibers for H2 and O2 Generation
(2017)Sn:In2O3 nanowires have been grown by the vapor liquid solid mechanism on Si, Ni, Mo, and C fibers. These were used to obtain Sn:In2O3/NiS2 core-shell nanowires by the deposition of 10 nm Ni over the Sn:In2O3 nanowires ...
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Article
Ultrafast dynamics of localized and delocalized polaron transitions in P3HT/PCBM blend materials: The effects of PCBM concentration
(2009)Nowadays, organic solar cells have the interest of engineers for manufacturing flexible and low cost devices. The considerable progress of this nanotechnology area presents the possibility of investigating new effects from ...