Electrical spin injection and band offsets in an n-type ferromagnetic semiconductor heterostructure: n-CdCr2Se4 / AlGaAs / GaAs
Date
2003Author
Jonker, B. T.Hanbicki, A. T.
Kioseoglou, G.
Li, C. H.
Stroud, R. M.
Sullivan, J. M.
Erwin, S. C.
Lüpke, G.
Zhao, H. B.
Ren, Y. H.
Sun, B.
Itskos, Grigorios
Mallory, R.
Yasar, M.
Petrou, Athos Chariton
Source
Digests of the Intermag ConferenceIntermag 2003: International Magnetics Conference
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The electrical spin injection and band offsets in an n-type ferromagnetic semiconductor heterostructure were discussed. The electrical spin injection from spin-LED structures showed defect-dominated electroluminescence. The analysis showed that the addition of a ZnSe interlayer provides a smaller conduction band offset in CdCr2Se4/ZnSe/(AlGa)As heterostructure.