Electrical spin injection and band offsets in an n-type ferromagnetic semiconductor heterostructure: n-CdCr2Se4/AlGaAs/GaAs
Date
2003Author
Jonker, B. T.Hanbicki, A. T.
Kioseoglou, G.
Li, C. H.
Stroud, R. M.
Sullivan, J. M.
Erwin, S. C.
Lüpke, G.
Zhao, H. B.
Ren, Y. H.
Sun, B.
Itskos, Grigorios
Mallory, R.
Yasar, M.
Petrou, Athos Chariton
ISBN
0-7803-7647-1978-0-7803-7647-2
Publisher
Institute of Electrical and Electronics Engineers Inc.Source
Intermag 2003 - Program of the 2003 IEEE International Magnetics Conference2003 IEEE International Magnetics Conference, Intermag 2003
Google Scholar check
Keyword(s):
Metadata
Show full item recordAbstract
Electrical spin injection and band offsets in an n-type ferromagnetic semiconductor heterostructure of CdCr2Se4-AlGaAs-GaAs are studied. Epitaxially grown CdCr2Se4 films exhibit hysteresis behavior with significant remanence, an in- plane easy axis with a coercive field of 125 Oe. The cross section of the LED and the band alignment were shown. © 2003 IEEE.