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dc.contributor.authorIA Vitkinen
dc.contributor.authorChristofides, Constantinosen
dc.contributor.authorMandelis, Andreasen
dc.creatorIA Vitkinen
dc.creatorChristofides, Constantinosen
dc.creatorMandelis, Andreasen
dc.date.accessioned2019-12-02T15:30:33Z
dc.date.available2019-12-02T15:30:33Z
dc.date.issued1990
dc.identifier.urihttp://gnosis.library.ucy.ac.cy/handle/7/58730
dc.description.abstractABSTRACT Silicon films damaged by ion implantation have been examined using the Photothermal Reflectance (PTR) technique. Data are presented on the sensitivity of this method to the implant parameters such as dose and species, and on the dependence on thermal annealing. It has been shown that the technique provides much valuable information about the state of the implanted layer, and is a sensitive probe for monitoring the annihilation of the induced damage as a function of the annealing temperature. The ...en
dc.sourceSurface Engineeringen
dc.titlePhotothermal Reflectance Investigation of Implanted Siliconen
dc.typeinfo:eu-repo/semantics/article
dc.description.startingpage22
dc.description.endingpage28
dc.author.facultyΣχολή Θετικών και Εφαρμοσμένων Επιστημών / Faculty of Pure and Applied Sciences
dc.author.departmentΤμήμα Φυσικής / Department of Physics
dc.type.uhtypeArticleen
dc.contributor.orcidChristofides, Constantinos [0000-0002-4020-4660]
dc.gnosis.orcid0000-0002-4020-4660


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