Ellipsometric analysis of ion-implanted polycrystalline silicon films before and after annealing
dc.contributor.author | Lioudakis, Emmanouil E. | en |
dc.contributor.author | Nassiopoulou, Androula Galiouna | en |
dc.contributor.author | Othonos, Andreas S. | en |
dc.creator | Lioudakis, Emmanouil E. | en |
dc.creator | Nassiopoulou, Androula Galiouna | en |
dc.creator | Othonos, Andreas S. | en |
dc.date.accessioned | 2019-12-02T15:31:45Z | |
dc.date.available | 2019-12-02T15:31:45Z | |
dc.date.issued | 2006 | |
dc.identifier.uri | http://gnosis.library.ucy.ac.cy/handle/7/58835 | |
dc.description.abstract | A study of arsenic ion-implanted polycrystalline silicon films before and after annealing at various temperatures has been performed using spectroscopic ellipsometry in the ultraviolet to the visible spectral region. Using the Bruggeman effective medium approximation, an optical/structural model is presented for all the annealed samples explaining the measurements. Ellipsometric measurements reveal important structural changes as a function of annealing temperature which provide an interesting inside into the annealing kinetics of ion-implanted polycrystalline silicon films. This work also demonstrates the importance of spectroscopic ellipsometry in determining non-destructively the dielectric functions in materials that have undergone complex processing. © 2005 Elsevier B.V. All rights reserved. | en |
dc.source | Thin Solid Films | en |
dc.source.uri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-28044443915&doi=10.1016%2fj.tsf.2005.08.339&partnerID=40&md5=1020907efaac680bfec419fdd8015cd9 | |
dc.subject | Mathematical models | en |
dc.subject | Dielectric materials | en |
dc.subject | Thermal effects | en |
dc.subject | Polycrystalline materials | en |
dc.subject | Thin films | en |
dc.subject | Annealing | en |
dc.subject | Nondestructive examination | en |
dc.subject | Arsenic | en |
dc.subject | Ellipsometry | en |
dc.subject | Ion implantation | en |
dc.subject | Silicon films | en |
dc.subject | Annealing kinetics | en |
dc.subject | Bruggeman effective medium approximation | en |
dc.subject | Polycrystalline silicon | en |
dc.subject | Polysilicon | en |
dc.subject | Visible spectral regions | en |
dc.title | Ellipsometric analysis of ion-implanted polycrystalline silicon films before and after annealing | en |
dc.type | info:eu-repo/semantics/article | |
dc.identifier.doi | 10.1016/j.tsf.2005.08.339 | |
dc.description.volume | 496 | |
dc.description.issue | 2 | |
dc.description.startingpage | 253 | |
dc.description.endingpage | 258 | |
dc.author.faculty | Σχολή Θετικών και Εφαρμοσμένων Επιστημών / Faculty of Pure and Applied Sciences | |
dc.author.department | Τμήμα Φυσικής / Department of Physics | |
dc.type.uhtype | Article | en |
dc.description.notes | <p>Cited By :22</p> | en |
dc.source.abbreviation | Thin Solid Films | en |
dc.contributor.orcid | Othonos, Andreas S. [0000-0003-0016-9116] | |
dc.gnosis.orcid | 0000-0003-0016-9116 |
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