Ultrafast transient photoinduced absorption in silicon nanocrystals: Coupling of oxygen-related states to quantized sublevels
Date
2007Source
Applied Physics LettersVolume
90Issue
17Google Scholar check
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The authors have studied transient photoinduced absorption in single monolayers of oxidized silicon nanocrystals. Transient photoinduced absorption measurements along with optical absorption and photoluminescence (PL) emission reveal that the light-absorption process takes place in defects related to strong PL emission, suggesting that the photoexcited carriers are in oxygen-related interface states. They have time-resolved ultrafast relaxation paths in oxygen-related states and quantized sublevels, which have important implications in the understanding of fundamental optical properties for this system. © 2007 American Institute of Physics.