Photothermal reflection signal versus temperature: Study of implanted Si wafers
Date
1996ISSN
1002-0071Source
Progress in Natural Science-Materials InternationalVolume
6Pages
S507-S510Google Scholar check
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A quantitative analysis of the temperature dependence (40 to 300 K) of the photothermal reflectance signal on crystalline and phosphorus implanted silicon wafers is presented. A theoretical model has been adapted for the interpretation of experimental results concerning photothermal measurements as a function of temperature. The quantitative analysis of the temperature dependence of the photothermal reflectance signal on crystalline and implanted silicon wafers at various doses led to a non-destructive evaluation of their optical, electronic, and thermal properties in a wide temperature range.