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Photothermal reflection signal versus temperature: Study of implanted Si wafers

dc.contributor.authorNestoros, Mariosen
dc.contributor.authorForget, BCen
dc.contributor.authorSeas, Antoniosen
dc.contributor.authorChristofides, Constantinosen
dc.creatorNestoros, Mariosen
dc.creatorForget, BCen
dc.creatorSeas, Antoniosen
dc.creatorChristofides, Constantinosen
dc.date.accessioned2019-12-02T15:32:04Z
dc.date.available2019-12-02T15:32:04Z
dc.date.issued1996
dc.identifier.issn1002-0071
dc.identifier.urihttp://gnosis.library.ucy.ac.cy/handle/7/58912
dc.description.abstractA quantitative analysis of the temperature dependence (40 to 300 K) of the photothermal reflectance signal on crystalline and phosphorus implanted silicon wafers is presented. A theoretical model has been adapted for the interpretation of experimental results concerning photothermal measurements as a function of temperature. The quantitative analysis of the temperature dependence of the photothermal reflectance signal on crystalline and implanted silicon wafers at various doses led to a non-destructive evaluation of their optical, electronic, and thermal properties in a wide temperature range.en
dc.sourceProgress in Natural Science-Materials Internationalen
dc.titlePhotothermal reflection signal versus temperature: Study of implanted Si wafersen
dc.typeinfo:eu-repo/semantics/article
dc.description.volume6
dc.description.startingpageS507
dc.description.endingpageS510
dc.author.facultyΣχολή Θετικών και Εφαρμοσμένων Επιστημών / Faculty of Pure and Applied Sciences
dc.author.departmentΤμήμα Φυσικής / Department of Physics
dc.type.uhtypeArticleen
dc.description.notes<p>PT: Jen
dc.description.notesTC: 2en
dc.description.notesJ9: PROG NAT SCI-MATERen
dc.description.notesSU: S</p>en
dc.source.abbreviationProg.Nat.Sci.en
dc.contributor.orcidNestoros, Marios [0000-0002-2343-4771]
dc.contributor.orcidChristofides, Constantinos [0000-0002-4020-4660]
dc.gnosis.orcid0000-0002-2343-4771
dc.gnosis.orcid0000-0002-4020-4660


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