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Photoluminescence Measurements on Phosphorus Implanted Silicon - Annealing Kinetics of Defects

dc.contributor.authorOthonos, Andreas S.en
dc.contributor.authorChristofides, Constantinosen
dc.creatorOthonos, Andreas S.en
dc.creatorChristofides, Constantinosen
dc.date.accessioned2019-12-02T15:32:07Z
dc.date.available2019-12-02T15:32:07Z
dc.date.issued1995
dc.identifier.issn0021-8979
dc.identifier.urihttp://gnosis.library.ucy.ac.cy/handle/7/58929
dc.sourceJournal of Applied Physicsen
dc.subjectTEMPERATUREen
dc.subjectION-IMPLANTATIONen
dc.subjectLAYERSen
dc.subjectPHOTO-LUMINESCENCEen
dc.titlePhotoluminescence Measurements on Phosphorus Implanted Silicon - Annealing Kinetics of Defectsen
dc.typeinfo:eu-repo/semantics/article
dc.identifier.doi10.1063/1.360337
dc.description.volume78
dc.description.issue2
dc.description.startingpage796
dc.description.endingpage800
dc.author.facultyΣχολή Θετικών και Εφαρμοσμένων Επιστημών / Faculty of Pure and Applied Sciences
dc.author.departmentΤμήμα Φυσικής / Department of Physics
dc.type.uhtypeArticleen
dc.description.notes<p>PT: Jen
dc.description.notesTC: 5en
dc.description.notesJ9: J APPL PHYS</p>en
dc.source.abbreviationJ.Appl.Phys.en
dc.contributor.orcidOthonos, Andreas S. [0000-0003-0016-9116]
dc.contributor.orcidChristofides, Constantinos [0000-0002-4020-4660]
dc.gnosis.orcid0000-0003-0016-9116
dc.gnosis.orcid0000-0002-4020-4660


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