Electrical spin injection across air-exposed epitaxially regrown semiconductor interfaces
Date
2000Author
Park, Y. D.Jonker, B. T.
Bennett, B. R.
![ORCID logo](https://orcid.org/sites/default/files/images/orcid_16x16.png)
Furis, M.
Kioseoglou, G.
Petrou, Athos Chariton
Source
Applied Physics LettersVolume
77Issue
24Pages
3989-3991Google Scholar check
Metadata
Show full item recordAbstract
We have fabricated spin-polarized light-emitting diode structures via epitaxial regrowth of Znl-xMnxSe on air-exposed surfaces of AlyGal-yAs/GaAs quantum wells. No passivation procedures were used to protect or prepare the III-V surface. The electroluminescence is strongly circularly polarized due to the electrical injection of spin-polarized electrons from the ZnMnSe contact into the GaAs quantum well. An analysis of the optical polarization yields a lower hound of 65% for the spin injection efficiency. These results demonstrate the robustness of the spin injection process in the diffusive transport regime, and attest to the practicality of manufacturing semiconductor-based spin injection devices. © 2000 American Institute of Physics.