dc.contributor.author | Park, Y. D. | en |
dc.contributor.author | Jonker, B. T. | en |
dc.contributor.author | Bennett, B. R. | en |
dc.contributor.author | Itskos, Grigorios | en |
dc.contributor.author | Furis, M. | en |
dc.contributor.author | Kioseoglou, G. | en |
dc.contributor.author | Petrou, Athos Chariton | en |
dc.creator | Park, Y. D. | en |
dc.creator | Jonker, B. T. | en |
dc.creator | Bennett, B. R. | en |
dc.creator | Itskos, Grigorios | en |
dc.creator | Furis, M. | en |
dc.creator | Kioseoglou, G. | en |
dc.creator | Petrou, Athos Chariton | en |
dc.date.accessioned | 2019-12-02T15:32:21Z | |
dc.date.available | 2019-12-02T15:32:21Z | |
dc.date.issued | 2000 | |
dc.identifier.uri | http://gnosis.library.ucy.ac.cy/handle/7/58987 | |
dc.description.abstract | We have fabricated spin-polarized light-emitting diode structures via epitaxial regrowth of Znl-xMnxSe on air-exposed surfaces of AlyGal-yAs/GaAs quantum wells. No passivation procedures were used to protect or prepare the III-V surface. The electroluminescence is strongly circularly polarized due to the electrical injection of spin-polarized electrons from the ZnMnSe contact into the GaAs quantum well. An analysis of the optical polarization yields a lower hound of 65% for the spin injection efficiency. These results demonstrate the robustness of the spin injection process in the diffusive transport regime, and attest to the practicality of manufacturing semiconductor-based spin injection devices. © 2000 American Institute of Physics. | en |
dc.source | Applied Physics Letters | en |
dc.source.uri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0000072825&partnerID=40&md5=3b0f506d3bbe7480cfb57251e5ee6c1d | |
dc.title | Electrical spin injection across air-exposed epitaxially regrown semiconductor interfaces | en |
dc.type | info:eu-repo/semantics/article | |
dc.description.volume | 77 | |
dc.description.issue | 24 | |
dc.description.startingpage | 3989 | |
dc.description.endingpage | 3991 | |
dc.author.faculty | Σχολή Θετικών και Εφαρμοσμένων Επιστημών / Faculty of Pure and Applied Sciences | |
dc.author.department | Τμήμα Φυσικής / Department of Physics | |
dc.type.uhtype | Article | en |
dc.description.notes | <p>Cited By :58</p> | en |
dc.source.abbreviation | Appl.Phys.Lett. | en |
dc.contributor.orcid | Itskos, Grigorios [0000-0003-3971-3801] | |
dc.gnosis.orcid | 0000-0003-3971-3801 | |