dc.contributor.author | Zervos, Matthew | en |
dc.contributor.author | Othonos, Andreas S. | en |
dc.contributor.author | Tsokkou, Demetra | en |
dc.contributor.author | Kioseoglou, J. | en |
dc.contributor.author | Pavlidou, E. | en |
dc.contributor.author | Komninou, P. | en |
dc.creator | Zervos, Matthew | en |
dc.creator | Othonos, Andreas S. | en |
dc.creator | Tsokkou, Demetra | en |
dc.creator | Kioseoglou, J. | en |
dc.creator | Pavlidou, E. | en |
dc.creator | Komninou, P. | en |
dc.date.accessioned | 2019-12-02T15:34:51Z | |
dc.date.available | 2019-12-02T15:34:51Z | |
dc.date.issued | 2013 | |
dc.identifier.issn | 1862-6300 | |
dc.identifier.uri | http://gnosis.library.ucy.ac.cy/handle/7/59235 | |
dc.description.abstract | Tin oxide (SnO2) nanowires (NWs) with diameters of 50 nm, lengths up to 100 μm and a tetragonal rutile crystal structure have been grown by low pressure reactive vapour transport on 1 nm Au/Si(001). The free carrier density of the SnO2 NWs measured by THz absorption spectroscopy was found to be n = (3.3 ± 0.4) × 1016 cm-3. Based on this we have determined the one-dimensional (1D) sub-band energies, overall charge distribution and band bending via the self-consistent solution of the Poisson-Schrödinger equations in cylindrical coordinates and in the effective mass approximation. We find that a high density of 1018-1019 cm-3 donor-like defect related states is required to obtain a line density of 0.7 × 109 close to the measured value by taking the Fermi level to be situated ≈0.7 eV below the conduction band edge at the surface which gives a surface depletion shell thickness of 15 nm. We discuss the origin of the donor-like states that are energetically located in the upper half of the energy band gap as determined by ultrafast, time-resolved absorption-transmission spectroscopy. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. | en |
dc.source | Physica Status Solidi (A) Applications and Materials Science | en |
dc.source.uri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-84872404350&doi=10.1002%2fpssa.201200403&partnerID=40&md5=3ba9d781695232407f8529af1d27b7aa | |
dc.subject | Tin | en |
dc.subject | spectroscopy | en |
dc.subject | Ultra-fast | en |
dc.subject | Conduction band edge | en |
dc.subject | Time-resolved | en |
dc.subject | Effective mass approximation | en |
dc.subject | Cylindrical coordinates | en |
dc.subject | Self-consistent solution | en |
dc.subject | Dinger equation | en |
dc.subject | Charge distribution | en |
dc.subject | Bandbending | en |
dc.subject | Vapour transport | en |
dc.subject | Subbands | en |
dc.subject | Tin oxides | en |
dc.subject | Surface defects | en |
dc.subject | Defect density | en |
dc.subject | defects | en |
dc.subject | Free carrier density | en |
dc.subject | High density | en |
dc.subject | Line density | en |
dc.subject | Low pressures | en |
dc.subject | nanowires | en |
dc.subject | Shell thickness | en |
dc.subject | Surface depletion | en |
dc.subject | tin oxide | en |
dc.title | Structural properties of SnO2 nanowires and the effect of donor like defects on its charge distribution | en |
dc.type | info:eu-repo/semantics/article | |
dc.identifier.doi | 10.1002/pssa.201200403 | |
dc.description.volume | 210 | |
dc.description.issue | 1 | |
dc.description.startingpage | 226 | |
dc.description.endingpage | 229 | |
dc.author.faculty | Σχολή Θετικών και Εφαρμοσμένων Επιστημών / Faculty of Pure and Applied Sciences | |
dc.author.department | Τμήμα Φυσικής / Department of Physics | |
dc.type.uhtype | Article | en |
dc.description.notes | <p>Cited By :7</p> | en |
dc.source.abbreviation | Phys.Status Solidi A Appl.Mater.Sci. | en |
dc.contributor.orcid | Othonos, Andreas S. [0000-0003-0016-9116] | |
dc.contributor.orcid | Zervos, Matthew [0000-0002-6321-233X] | |
dc.gnosis.orcid | 0000-0003-0016-9116 | |
dc.gnosis.orcid | 0000-0002-6321-233X | |