Magnetic domain-wall racetrack memory for high density and fast data storage
dc.contributor.author | Zhao, W. S. | en |
dc.contributor.author | Zhang, Y. | en |
dc.contributor.author | Trinh, H. -P | en |
dc.contributor.author | Klein, J. -O | en |
dc.contributor.author | Chappert, C. | en |
dc.contributor.author | Mantovan, R. | en |
dc.contributor.author | Lamperti, A. | en |
dc.contributor.author | Cowburn, R. P. | en |
dc.contributor.author | Trypiniotis, Theodossis | en |
dc.contributor.author | Klaui, M. | en |
dc.contributor.author | Heinen, J. | en |
dc.contributor.author | Ocker, B. | en |
dc.contributor.author | Ravelosona, D. | en |
dc.creator | Zhao, W. S. | en |
dc.creator | Zhang, Y. | en |
dc.creator | Trinh, H. -P | en |
dc.creator | Klein, J. -O | en |
dc.creator | Chappert, C. | en |
dc.creator | Mantovan, R. | en |
dc.creator | Lamperti, A. | en |
dc.creator | Cowburn, R. P. | en |
dc.creator | Trypiniotis, Theodossis | en |
dc.creator | Klaui, M. | en |
dc.creator | Heinen, J. | en |
dc.creator | Ocker, B. | en |
dc.creator | Ravelosona, D. | en |
dc.date.accessioned | 2019-12-02T15:34:53Z | |
dc.date.available | 2019-12-02T15:34:53Z | |
dc.date.issued | 2012 | |
dc.identifier.isbn | 978-1-4673-2472-4 | |
dc.identifier.uri | http://gnosis.library.ucy.ac.cy/handle/7/59243 | |
dc.description.abstract | The racetrack memory device is a new concept of Magnetic RAM (MRAM) based on controlling domain wall (DW) motion in ferromagnetic nanowires. It promises ultra-high storage density thanks to the possibility to store multiple narrow DWS per memory cell. By using read and write heads based on magnetic tunnel junctions (MTJ) with perpendicular magnetic anisotropy (PMA) fast data access speed can also be achieved. Thereby the racetrack memory can be used as universal storage to address both embedded and standalone applications. In this paper, we present the device physics, integration circuit and architecture designs of a racetrack memory based on MTJs with PMA. Mixed SPICE simulations at 65 nm node demonstrate the capabilities of this device to perform high performances. Finally, we compare the potential specifications of the racetrack memory with other advanced non-volatile memory technologies. © 2012 IEEE. | en |
dc.source | ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings | en |
dc.source | 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012 | en |
dc.source.uri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-84874865866&doi=10.1109%2fICSICT.2012.6466687&partnerID=40&md5=149d1e8dc2586616d050cbd6f2367c0f | |
dc.subject | Random access storage | en |
dc.subject | Magnetic tunnel junction | en |
dc.subject | Nanowires | en |
dc.subject | Data storage equipment | en |
dc.subject | Architecture designs | en |
dc.subject | Domain wall motion | en |
dc.subject | Ferromagnetic nanowire | en |
dc.subject | Integration circuits | en |
dc.subject | Magnetic devices | en |
dc.subject | Magnetic domains | en |
dc.subject | MRAM devices | en |
dc.subject | Non-volatile memory technology | en |
dc.subject | Perpendicular magnetic anisotropy | en |
dc.subject | Standalone applications | en |
dc.title | Magnetic domain-wall racetrack memory for high density and fast data storage | en |
dc.type | info:eu-repo/semantics/conferenceObject | |
dc.identifier.doi | 10.1109/ICSICT.2012.6466687 | |
dc.author.faculty | Σχολή Θετικών και Εφαρμοσμένων Επιστημών / Faculty of Pure and Applied Sciences | |
dc.author.department | Τμήμα Φυσικής / Department of Physics | |
dc.type.uhtype | Conference Object | en |
dc.description.notes | <p>Sponsors: IEEE Beijing Section | en |
dc.description.notes | Fudan University | en |
dc.description.notes | Xidian University | en |
dc.description.notes | IEEE Electron Devices Society Shanghai Chapter | en |
dc.description.notes | IEEE SSCS Shanghai Chapter | en |
dc.description.notes | Conference code: 95953 | en |
dc.description.notes | Cited By :13</p> | en |
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