Browsing by Subject "Molecular beam epitaxy"
Now showing items 1-5 of 5
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Analysis of the transport process providing spin injection through an Fe/AlGaAs Schottky barrier
(2003)Electrical injection through a reverse biased Fe/AlGaAs Schottky contact was used to obtain electron-spin polarizations in a GaAs quantum well. The analysis of the transport data using the Rowell criteria shows that ...
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InAs quantum dots grown by molecular beam epitaxy on GaAs (211)B polar substrates
(2006)InAs nanostructures were grown by molecular beam epitaxy on GaAs (211)B at temperatures between 400-530 °C and growth rates that were varied between 0.1 to 0.02 mono-layers (ML) per second. For temperatures up to 500 °C ...
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Investigation into the charge distribution and barrier profile tailoring in AlGaN/GaN double heterostructures by self-consistent Poisson-Schrödinger calculations and capacitance-voltage profiling
(2002)The two-dimensional electron gas (2DEG) distribution and conduction-band profile tailoring of the Al xGa 1-xN/GaN/Al yGa 1-yN/GaN double heterostructure (DH) has been studied in detail by self-consistent Poisson-Schrödinger ...
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Properties of Si-doped GaN and AlGaN/GaN heterostructures grown by RF-MBE on high resistivity Fe-doped GaN
(2006)Silicon-doped GaN epilayers and AlGaN/GaN heterostructures were developed by nitrogen plasma-assisted molecular beam epitaxy on high resistivity iron-doped GaN (0001) templates and their properties were investigated by ...
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Reduction of spin injection efficiency by interface defect spin scattering in ZnMnSe/AlGaAs-GaAs spin-polarized light-emitting diodes
(2002)The effects of the interface microstructure on spin-injection efficiency in Zn1-xMnxSe/AlyGa1-yAs-GaAs spin-polarized light-emitting diodes (spin-LEDs) were studied. It was shown that the quantum well (QW) spin polarization ...