Browsing by Subject "Spin polarization"
Now showing items 1-8 of 8
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Article
Efficient electrical spin injection from a magnetic metal/tunnel barrier contact into a semiconductor
(2002)We report electrical spin injection from a ferromagnetic metal contact into a semiconductor light emitting diode structure with an injection efficiency of 30% which persists to room temperature. The Schottky barrier formed ...
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Conference Object
Electrical spin injection and band offsets in an n-type ferromagnetic semiconductor heterostructure: n-CdCr2Se4/AlGaAs/GaAs
(Institute of Electrical and Electronics Engineers Inc., 2003)Electrical spin injection and band offsets in an n-type ferromagnetic semiconductor heterostructure of CdCr2Se4-AlGaAs-GaAs are studied. Epitaxially grown CdCr2Se4 films exhibit hysteresis behavior with significant remanence, ...
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Conference Object
Highly efficient spin filtering of ballistic electrons in hybrid spin valve/semiconductor structures
(2004)The highly efficient spin filtering of ballistic electrons in hybrid spin valve/semiconductor (SC) structures was discussed. It was found that the photocurrent was dependent on the relative alignment of the light helicity ...
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Article
Initial/final state selection of the spin polarization in electron tunneling across an epitaxial FeGaAs (001) interface
(2007)Spin dependent electron transport across epitaxial FeGaAs (001) interfaces has been investigated using photoexcitation techniques. Spin filtering is observed in the forward bias regime and its sign is switched by using ...
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Article
Spin current depolarization under high electric fields in undoped InGaAs
(2011)Carrier spin polarization in In0.13Ga0.87 As under high electric fields has been investigated. The spin polarization was created by optical spin orientation techniques and the inverse spin-Hall effect was employed to measure ...
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Article
Spin polarisation and anomalous Hall effect in NiMnSb films
(2004)NiMnSb has attracted a great deal of interest as a spin injector/detector in spintronic devices because it has a Curie temperature of 728 K and is predicted to be half-metallic (100% spin polarized). NiMnSb has been reported ...
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Article
Structural, magnetic, and electrical properties of NiMnSb thin films grown on InSb by pulsed-laser deposition
(2004)We report the growth of single-phase, stoichiometric polycrystalline thin films of the half-Heusler ferromagnet NiMnSb, predicted to be half-metallic, on single crystal InSb (100) substrates heated at 200°C by pulsed laser ...
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Article
Synthesis and physical properties of arc melted NiMnSb
(2004)The synthesis and physical properties of arc melted NiMnSb were studied using X-ray diffraction analysis. It was observed that the half metallicity in NiMnSb is supported by the integer saturation magnetization value at 5 ...