Structural, magnetic, and electrical properties of NiMnSb thin films grown on InSb by pulsed-laser deposition
Buckle, P. D.
SourceApplied Physics Letters
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We report the growth of single-phase, stoichiometric polycrystalline thin films of the half-Heusler ferromagnet NiMnSb, predicted to be half-metallic, on single crystal InSb (100) substrates heated at 200°C by pulsed laser deposition. The films exhibit saturation magnetization of 4 μB/ formula unit at 5 K and coercive fields of 2 Oe at 300 K indicative of their good structural quality. At low temperatures (7200 K it behaves like an itinerant ferromagnet. The resistivity of the film at 5 K is 6 μΩ cm. © 2004 American Institute of Physics.