dc.contributor.author | Gardelis, S. | en |
dc.contributor.author | Androulakis, J. | en |
dc.contributor.author | Giapintzakis, John | en |
dc.contributor.author | Monnereau, O. | en |
dc.contributor.author | Buckle, P. D. | en |
dc.creator | Gardelis, S. | en |
dc.creator | Androulakis, J. | en |
dc.creator | Giapintzakis, John | en |
dc.creator | Monnereau, O. | en |
dc.creator | Buckle, P. D. | en |
dc.date.accessioned | 2019-05-06T12:23:35Z | |
dc.date.available | 2019-05-06T12:23:35Z | |
dc.date.issued | 2004 | |
dc.identifier.uri | http://gnosis.library.ucy.ac.cy/handle/7/48348 | |
dc.description.abstract | We report the growth of single-phase, stoichiometric polycrystalline thin films of the half-Heusler ferromagnet NiMnSb, predicted to be half-metallic, on single crystal InSb (100) substrates heated at 200°C by pulsed laser deposition. The films exhibit saturation magnetization of 4 μB/ formula unit at 5 K and coercive fields of 2 Oe at 300 K indicative of their good structural quality. At low temperatures (7200 K it behaves like an itinerant ferromagnet. The resistivity of the film at 5 K is 6 μΩ cm. © 2004 American Institute of Physics. | en |
dc.language.iso | eng | en |
dc.source | Applied Physics Letters | en |
dc.subject | Stoichiometry | en |
dc.subject | Polycrystalline materials | en |
dc.subject | Ferromagnetic materials | en |
dc.subject | Magnetization | en |
dc.subject | Nickel compounds | en |
dc.subject | Pulsed laser deposition | en |
dc.subject | X ray diffraction analysis | en |
dc.subject | Thin films | en |
dc.subject | Single crystals | en |
dc.subject | Spin polarization | en |
dc.subject | Energy dispersive spectroscopy | en |
dc.subject | Scanning electron microscopy | en |
dc.subject | Curie temperature | en |
dc.subject | Field effect transistors | en |
dc.subject | Residual resistivity | en |
dc.subject | Scanning electron micrographs | en |
dc.subject | Semiconducting indium compounds | en |
dc.title | Structural, magnetic, and electrical properties of NiMnSb thin films grown on InSb by pulsed-laser deposition | en |
dc.type | info:eu-repo/semantics/article | |
dc.identifier.doi | 10.1063/1.1807026 | |
dc.description.volume | 85 | |
dc.description.startingpage | 3178 | |
dc.description.endingpage | 3180 | |
dc.author.faculty | Πολυτεχνική Σχολή / Faculty of Engineering | |
dc.author.department | Τμήμα Μηχανικών Μηχανολογίας και Κατασκευαστικής / Department of Mechanical and Manufacturing Engineering | |
dc.type.uhtype | Article | en |
dc.contributor.orcid | Giapintzakis, John [0000-0002-7277-2662] | |
dc.description.totalnumpages | 3178-3180 | |
dc.gnosis.orcid | 0000-0002-7277-2662 | |