Browsing by Author "G Ghibaudo"

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    • Article  

      accepted for publication 22 May 1986) 

      H Jaouen; G Ghibaudo; Christofides, Constantinos
      Electronic transport properties of heavily doped arsenic implanted silicon are reported. Hall mobility and sheet resistance as functions of temperature and frequency have been carried out both on annealed and as-implanted ...
    • Article  

      Arsenic implanted silicon by transport effect. Thermal annealing influence 

      Christofides, Constantinos; G Ghibaudo; H Jaouen (1987)
      A study of the effects of thermal annealing on the transport properties in arsenic implanted silicon films is reported. In particular, the sheet resistance and the Hall mobility obtained by the Van der Pauw method is ...