Browsing Τμήμα Φυσικής / Department of Physics by Subject "GAAS"
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Article
Multi-wavelength Raman probing of phosphorus implanted silicon wafers
(1996)Raman spectroscopy is performed on phosphorus implanted silicon wafers with several excitation laser wavelengths ranging from 458 nm to 752.5 nm. The silicon layers were implanted with various implantation energies and ...
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Article
Optical Spectroscopy on Implanted and Annealed Silicon-Wafers - Plasma Resonance Wavelength
(1994)A study of the effects of annealing temperature on phosphorus-implanted silicon films is carried out. Fourier transform infrared spectroscopy has been performed with two different instruments in the spectral ranges of ...
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Article