• Article  

      A2Bi8Se13 (A = Rb, Cs), CsBi3.67Se6, and BaBi2Se4: New ternary semiconducting bismuth selenides 

      Iordanidis, L.; Brazis, P. W.; Kyratsi, Theodora; Ireland, J.; Lane, M.; Kannewurf, C. R.; Chen, W.; Dyck, J. S.; Uher, C.; Ghelani, N. A.; Hogan, T.; Kanatzidis, M. G. (2001)
      Rb2Bi8Se13 (I), Cs2Bi8Se13 (II), CsBi3.67Se6 (III), and BaBi2Se4 (IV) were synthesized by direct combination reactions of the A/Se (A = Rb, Cs, Ba) and Bi2Se3 at ≥650 °C. Their structures were determined by single-crystal ...
    • Conference Object  

      Doping studies of n-type CsBi4Te6 thermoelectric materials 

      Lane, M. A.; Ireland, J. R.; Brazis, P. W.; Kyratsi, Theodora; Chung, D. Y.; Kanatzidis, M. G.; Kannewurf, C. R. (Affiliation: Dept of Electrical and Computer Eng., Northwestern University, Evanston, IL 60208, United StatesCorrespondence Address: Lane, M.A.Dept of Electrical and Computer Eng., Northwestern University, Evanston, IL 60208, United States, 2001)
      We have previously reported the successful p-type doping of CsBi4Te6 which had a high figure of merit at temperatures below 300 K. In this study, several dopants were explored to make n-type CsBi4Te6. A program of measurements ...
    • Conference Object  

      Transport properties of the doped thermoelectric material K2Bi8-xSbxSe13 

      Brazis, P. W.; Ireland, J. R.; Lane, M. A.; Kyratsi, Theodora; Chung, D. Y.; Kanatzidis, M. G.; Kannewurf, C. R. (Affiliation: Dept. of Electrical and Comp. Eng., Northwestern University, Evanston, IL 60208-3118, United StatesCorrespondence Address: Brazis, P.W.Dept. of Electrical and Comp. Eng., Northwestern University, Evanston, IL 60208-3118, United States, 2001)
      The synthesis, physicochemical, spectroscopic, and structural characterization of the compound β-K2Bi8Se13 has been previously reported. The results indicated that this material should be investigated further for possible ...