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Now showing items 11-20 of 21
Tin oxide nanowires: The influence of trap states on ultrafast carrier relaxation
(2009)
We have studied the optical properties and carrier dynamics in SnO 2 nanowires (NWs) with an average radius of 50 nm that were grown via the vapor-liquid solid method. Transient differential absorption measurements have ...
Carrier relaxation dynamics in SnxNy nanowires grown by chemical vapor deposition
(2009)
Carrier relaxation dynamics in tin nitride (SnxNy) nanowires have been investigated using femtosecond transient absorption spectroscopy. The nanowires were grown directly on quartz using chemical vapor deposition and had ...
Ultrafast carrier relaxation in inn nanowires grown by reactive vapor transport
(2009)
We have studied femtosecond carrier dynamics in InN nanowires grown by reactive vapor transport. Transient differential absorption measurements have been employed to investigate the relaxation dynamics of photogenerated ...
Low temperature growth of In 2O 3 and InN nanocrystals on Si(111) via chemical vapour deposition based on the sublimation of NH 4Cl in In
(2009)
Indium oxide (In 2O 3) nanocrystals (NCs) have been obtained via atmospheric pressure, chemical vapour deposition (APCVD) on Si(111) via the direct oxidation of In with Ar:10% O 2 at 1000 °C but also at temperatures as low ...
Defect states of chemical vapor deposition grown GaN nanowires: Effects and mechanisms in the relaxation of carriers
(2009)
Carrier relaxation in GaN nanowires, grown by atmospheric pressure chemical vapor deposition, via direct nitridation of Ga with NH3 at 950 °C has been investigated in detail. Differential absorption measurements reveal a ...
Properties of the ubiquitous p-n junction in semiconductor nanowires
(2008)
The properties of nanowires with built-in p-n junctions such as the energetic position of the one-dimensional sub-bands, charge distributions and band bending in equilibrium are determined by the self-consistent solution ...
Investigation of spin-polarized resonant tunneling through double-barrier magnetic tunnel junctions by self-consistent solution of the Poisson-Schrödinger equations
(2003)
The article discusses the investigation of spin-polarized resonant tunneling through double barrier magnetic tunnel junctions (DBMTJ) by the self-consistent solution of Poissons and Schrödingers equations using transfer ...
Investigation into the charge distribution and barrier profile tailoring in AlGaN/GaN double heterostructures by self-consistent Poisson-Schrödinger calculations and capacitance-voltage profiling
(2002)
The two-dimensional electron gas (2DEG) distribution and conduction-band profile tailoring of the Al xGa 1-xN/GaN/Al yGa 1-yN/GaN double heterostructure (DH) has been studied in detail by self-consistent Poisson-Schrödinger ...
The Pinch-Off Behaviour and Charge Distribution in AlGaN-GaN-AlGaN-GaN Double Heterostructure Field Effect Transistors
(2001)
AlxGa1-xN/GaN/AlyGa1-yN/GaN double heterojunction field effect transistors with bottom AlyGa1-yN barrier widths between 100 and 2000 Å and Al contents of y = 0.15-0.3 were grown by radio-frequency molecular beam epitaxy ...
Current transport in semiconductor nanowires with built-in barriers based on a 1D transfer matrix calculation
(2008)
A one dimensional (1D) transfer matrix calculation of current transport in semiconductor nanowires with built-in barriers is described within the effective mass approximation by taking into account (i) the quantum confinement ...