The Pinch-Off Behaviour and Charge Distribution in AlGaN-GaN-AlGaN-GaN Double Heterostructure Field Effect Transistors
SourcePhysica Status Solidi (A) Applied Research
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AlxGa1-xN/GaN/AlyGa1-yN/GaN double heterojunction field effect transistors with bottom AlyGa1-yN barrier widths between 100 and 2000 Å and Al contents of y = 0.15-0.3 were grown by radio-frequency molecular beam epitaxy on both n+ and high resistivity GaN buffers on Al2O3. The charge distribution and pinch-off behaviour of the double heterojunctions grown on the n+ GaN layers were investigated in detail by capacitance-voltage profiling in conjunction with self-consistent Poisson-Schrödinger calculations. The electron densities and pinch-off voltages, deduced from capacitance-voltage measurements of the Schottky diodes are in excellent agreement with the theoretical values. We discuss the role of doping on the 2DEG density.