dc.contributor.author | Zervos, Matthew | en |
dc.contributor.author | Kostopoulos, A. | en |
dc.contributor.author | Constantinidis, G. | en |
dc.contributor.author | Kayambaki, M. | en |
dc.contributor.author | Mikroulis, S. | en |
dc.contributor.author | Flytzanis, N. | en |
dc.contributor.author | Georgakilas, A. | en |
dc.creator | Zervos, Matthew | en |
dc.creator | Kostopoulos, A. | en |
dc.creator | Constantinidis, G. | en |
dc.creator | Kayambaki, M. | en |
dc.creator | Mikroulis, S. | en |
dc.creator | Flytzanis, N. | en |
dc.creator | Georgakilas, A. | en |
dc.date.accessioned | 2019-05-06T12:24:53Z | |
dc.date.available | 2019-05-06T12:24:53Z | |
dc.date.issued | 2001 | |
dc.identifier.uri | http://gnosis.library.ucy.ac.cy/handle/7/48964 | |
dc.description.abstract | AlxGa1-xN/GaN/AlyGa1-yN/GaN double heterojunction field effect transistors with bottom AlyGa1-yN barrier widths between 100 and 2000 Å and Al contents of y = 0.15-0.3 were grown by radio-frequency molecular beam epitaxy on both n+ and high resistivity GaN buffers on Al2O3. The charge distribution and pinch-off behaviour of the double heterojunctions grown on the n+ GaN layers were investigated in detail by capacitance-voltage profiling in conjunction with self-consistent Poisson-Schrödinger calculations. The electron densities and pinch-off voltages, deduced from capacitance-voltage measurements of the Schottky diodes are in excellent agreement with the theoretical values. We discuss the role of doping on the 2DEG density. | en |
dc.language.iso | eng | en |
dc.source | Physica Status Solidi (A) Applied Research | en |
dc.title | The Pinch-Off Behaviour and Charge Distribution in AlGaN-GaN-AlGaN-GaN Double Heterostructure Field Effect Transistors | en |
dc.type | info:eu-repo/semantics/article | |
dc.identifier.doi | 10.1002/1521-396X(200111)188:1<259 | |
dc.description.volume | 188 | |
dc.description.startingpage | 259 | |
dc.description.endingpage | 262 | |
dc.author.faculty | Πολυτεχνική Σχολή / Faculty of Engineering | |
dc.author.department | Τμήμα Μηχανικών Μηχανολογίας και Κατασκευαστικής / Department of Mechanical and Manufacturing Engineering | |
dc.type.uhtype | Article | en |
dc.contributor.orcid | Zervos, Matthew [0000-0002-6321-233X] | |
dc.description.totalnumpages | 259-262 | |
dc.gnosis.orcid | 0000-0002-6321-233X | |