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Investigation of Different Si(111) Surface Preparation Methods for the Heteroepitaxy of GaN by Plasma-Assisted MBE
(2001)
The in-situ low temperature preparation of hydrogen passivated Si(111) surfaces has been investigated for GaN growth by rf-plasma source molecular beam epitaxy. The GaN/Si heterostructures were analyzed by transmission ...
Effects of the Sapphire Nitridation on the Polarity and Structural Properties of GaN Layers Grown by Plasma-Assisted MBE
(2001)
The nitridation of the (0001) sapphire surface by a nitrogen rf-plasma source used in GaN molecular beam epitaxy has been investigated. Auger electron spectroscopy measurements were used to estimate the extent of the ...
Properties of Si-doped GaN and AlGaN/GaN heterostructures grown by RF-MBE on high resistivity Fe-doped GaN
(2006)
Silicon-doped GaN epilayers and AlGaN/GaN heterostructures were developed by nitrogen plasma-assisted molecular beam epitaxy on high resistivity iron-doped GaN (0001) templates and their properties were investigated by ...
Investigation into the charge distribution and barrier profile tailoring in AlGaN/GaN double heterostructures by self-consistent Poisson-Schrödinger calculations and capacitance-voltage profiling
(2002)
The two-dimensional electron gas (2DEG) distribution and conduction-band profile tailoring of the Al xGa 1-xN/GaN/Al yGa 1-yN/GaN double heterostructure (DH) has been studied in detail by self-consistent Poisson-Schrödinger ...
The Pinch-Off Behaviour and Charge Distribution in AlGaN-GaN-AlGaN-GaN Double Heterostructure Field Effect Transistors
(2001)
AlxGa1-xN/GaN/AlyGa1-yN/GaN double heterojunction field effect transistors with bottom AlyGa1-yN barrier widths between 100 and 2000 Å and Al contents of y = 0.15-0.3 were grown by radio-frequency molecular beam epitaxy ...