Search
Now showing items 1-6 of 6
Sulfur doping of M/In2O3 (M=Al,W) nanowires with room temperature near infra red emission
(2015)
We have investigated the growth of Al doped In2O3 nanowires via the vapor-liquid-solid mechanism at 800°C using Au as a catalyst. We find that the Al is not incorporated into the cubic bixbyite crystal structure of In2O3 ...
Very high thermoelectric power factor in a Fe3O4/SiO2/p-type Si(100) heterostructure
(2012)
The thermoelectric and transport properties of a Fe3O4/SiO2/p-Si(100) heterostructure have been investigated between 100 and 300 K. Both Hall and Seebeck coefficients change sign from negative to positive with increasing ...
Electrical, structural, and optical properties of sulfurized Sn-doped In2O3 nanowires
(2015)
Sn-doped In2O3 nanowires have been grown on Si via the vapor-liquid-solid mechanism at 800 °C and then exposed to H2S between 300 to 600 °C. We observe the existence of cubic bixbyite In2O3 and hexagonal SnS2 after processing ...
Current transport and thermoelectric properties of very high power factor Fe3O4/SiO2/p-type Si(001) devices
(2014)
The current transport and thermoelectric properties of Fe3O4/SiO2/p-type Si(001) heterostructures with Fe3O4 thicknesses of 150, 200, and 350 nm have been investigated between 100 and 300K. We observe a sharp drop of the ...
Surface passivation and conversion of SnO2 to SnS2 nanowires
(2015)
SnO2 nanowires have been grown on Si(0 0 1) via the vapour-liquid-solid mechanism at 800 °C and then exposed to H2S between 300 and 600 °C. The SnS2/SnO2 nanowires obtained at 300 °C consist of tetragonal rutile SnO2 and ...
Broad compositional tunability of indium tin oxide nanowires grown by the vapor-liquid-solid mechanism
(2014)
Indium tin oxide nanowires were grown by the reaction of In and Sn with O2 at800 °C via the vapor-liquid-solid mechanism on 1 nm Au/Si(001). We obtain Sn doped In2O3 nanowires having a cubic bixbyite crystal structure by ...