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Residual Doping Effects on the Amplitude of Polarization-Induced Electric fields in GaN/AlGaN Quantum Wells
(2001)
We show that residual doping and carrier distribution effects decrease the observed polarization-induced electric fields in GaN/AlGaN quantum wells and that these effects ought to be considered if we want to compare in a ...
InAs quantum dots grown by molecular beam epitaxy on GaAs (211)B polar substrates
(2006)
InAs nanostructures were grown by molecular beam epitaxy on GaAs (211)B at temperatures between 400-530 °C and growth rates that were varied between 0.1 to 0.02 mono-layers (ML) per second. For temperatures up to 500 °C ...
Influence of polarization field on the lasing properties of III-nitride quantum wells
(2006)
A theoretical investigation of the effect of polarization-induced fields on the optoelectronic properties of a 3 nm In0.2Ga0.8N/GaN single quantum well has been carried out via a self-consistent solution of Schrödinger-Poisson ...
Internal field effects on the lasing characteristics of InGaN/GaN quantum well lasers
(2008)
A theoretical investigation of Inx Ga1-x N/GaN single quantum well lasers with x in the range 0.05≤x≤0.3 is carried out via self-consistent Schrödinger-Poisson calculations in the effective mass approximation in order to ...
Current transport in semiconductor nanowires with built-in barriers based on a 1D transfer matrix calculation
(2008)
A one dimensional (1D) transfer matrix calculation of current transport in semiconductor nanowires with built-in barriers is described within the effective mass approximation by taking into account (i) the quantum confinement ...