Residual Doping Effects on the Amplitude of Polarization-Induced Electric fields in GaN/AlGaN Quantum Wells
Pelekanos, N. T.
SourcePhysica Status Solidi (A) Applied Research
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We show that residual doping and carrier distribution effects decrease the observed polarization-induced electric fields in GaN/AlGaN quantum wells and that these effects ought to be considered if we want to compare in a meaningful manner the experimental and theoretical polarizations in the AlGaN system.