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Residual Doping Effects on the Amplitude of Polarization-Induced Electric fields in GaN/AlGaN Quantum Wells

dc.contributor.authorSimon, J.en
dc.contributor.authorLanger, R.en
dc.contributor.authorBarski, A.en
dc.contributor.authorZervos, Matthewen
dc.contributor.authorPelekanos, N. T.en
dc.creatorSimon, J.en
dc.creatorLanger, R.en
dc.creatorBarski, A.en
dc.creatorZervos, Matthewen
dc.creatorPelekanos, N. T.en
dc.date.accessioned2019-05-06T12:24:36Z
dc.date.available2019-05-06T12:24:36Z
dc.date.issued2001
dc.identifier.urihttp://gnosis.library.ucy.ac.cy/handle/7/48826
dc.description.abstractWe show that residual doping and carrier distribution effects decrease the observed polarization-induced electric fields in GaN/AlGaN quantum wells and that these effects ought to be considered if we want to compare in a meaningful manner the experimental and theoretical polarizations in the AlGaN system.en
dc.language.isoengen
dc.sourcePhysica Status Solidi (A) Applied Researchen
dc.titleResidual Doping Effects on the Amplitude of Polarization-Induced Electric fields in GaN/AlGaN Quantum Wellsen
dc.typeinfo:eu-repo/semantics/article
dc.identifier.doi10.1002/1521-396X(200112)188:2<867
dc.description.volume188
dc.description.startingpage867
dc.description.endingpage870
dc.author.facultyΠολυτεχνική Σχολή / Faculty of Engineering
dc.author.departmentΤμήμα Μηχανικών Μηχανολογίας και Κατασκευαστικής / Department of Mechanical and Manufacturing Engineering
dc.type.uhtypeArticleen
dc.contributor.orcidZervos, Matthew [0000-0002-6321-233X]
dc.description.totalnumpages867-870
dc.gnosis.orcid0000-0002-6321-233X


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