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Current Transport Properties of CuS/Sn:In2O3 versus CuS/SnO2 Nanowires and Negative Differential Resistance in Quantum Dot Sensitized Solar Cells
(2016)
The structural, optical, and electrical transport properties of nanowires obtained by the deposition of Cu over Sn doped In2O3 and SnO2 nanowires followed by processing under H2S between 100 and 500°C have been investigated ...
Ultrafast hole carrier relaxation dynamics in p-type CuO nanowires
(2011)
Ultrafast hole carrier relaxation dynamics in CuO nanowires have been investigated using transient absorption spectroscopy. Following femtosecond pulse excitation in a non-collinear pump-probe configuration, a combination ...
An investigation into the conversion of In2O3 into InN nanowires
(2011)
Straight In2O3 nanowires (NWs) with diameters of 50 nm and lengths ≥2 μm have been grown on Si(001) via the wet oxidation of In at 850°C using Au as a catalyst. These exhibited clear peaks in the X-ray diffraction corresponding ...
Carrier dynamics and conductivity of SnO 2 nanowires investigated by time-resolved terahertz spectroscopy
(2012)
THz spectroscopy has been applied to investigate the photo-induced and intrinsic conductivity in SnO 2 nanowires using the Drude-Smith model. The refractive index of the nanowires was found to decrease from 2.4 to 2.1 with ...
Ultrafast time-resolved spectroscopy of In2 O3 nanowires
(2009)
Ultrafast carrier dynamics in In2 O3 nanowires with an average diameter of ≈100±20 nm grown by the vapor-liquid-solid method have been investigated in detail using differential absorption spectroscopy with femtosecond ...
Electronic structure of piezoelectric double-barrier InAs/InP/InAs/InP/InAs (111) nanowires
(2004)
The numerical self-consistent solution of the Poisson-Schrodinger equations in cylindrical coordinates for calculating electronic states in the effective mass approximation was implemented. High accuracy and rapid convergence ...
Sn doped β-Ga2O3 and β-Ga2S3 nanowires with red emission for solar energy spectral shifting
(2015)
Sn doped β-Ga2O3 nanowires have been grown on Si(001) via the vapor-liquid-solid mechanism at 800 °C over a broad range of compositions. These have a monoclinic β-Ga2O3 crystal structure and minimum resistances for 1-2 at. ...
Sulfur doping of M/In2O3 (M=Al,W) nanowires with room temperature near infra red emission
(2015)
We have investigated the growth of Al doped In2O3 nanowires via the vapor-liquid-solid mechanism at 800°C using Au as a catalyst. We find that the Al is not incorporated into the cubic bixbyite crystal structure of In2O3 ...
Fabrication, characterization and applications of novel nanoheater structures
(2013)
Nanoheaters are reactive nanostructures that can generate localized heat through controlled ignition. Besides the widely used nanofoil structure with multiple alternative Al-Ni layers, various new nanostructures have been ...
The use of pulsed laser deposited seed layers for the aqueous solution growth of highly oriented ZnO nanowires on sapphire substrates at 95 C: Study of their photocatalytic activity in terms of octadecanoic (stearic) acid degradation
(2013)
The photocatalytic activity of ZnO nanowires grown via an aqueous solution approach at 95 C onto sapphire substrates, which were first pre-coated with ZnO seed layers deposited by pulsed laser deposition at various ...