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dc.contributor.authorMoradpour, A.en
dc.contributor.authorSchneegans, O.en
dc.contributor.authorFranger, S.en
dc.contributor.authorRevcolevschi, A.en
dc.contributor.authorSalot, R.en
dc.contributor.authorAuban-Senzier, P.en
dc.contributor.authorPasquier, C.en
dc.contributor.authorSvoukis, E.en
dc.contributor.authorGiapintzakis, Johnen
dc.contributor.authorDragos, O.en
dc.contributor.authorCiomaga, V.-C.en
dc.contributor.authorChrétien, P.en
dc.creatorMoradpour, A.en
dc.creatorSchneegans, O.en
dc.creatorFranger, S.en
dc.creatorRevcolevschi, A.en
dc.creatorSalot, R.en
dc.creatorAuban-Senzier, P.en
dc.creatorPasquier, C.en
dc.creatorSvoukis, E.en
dc.creatorGiapintzakis, Johnen
dc.creatorDragos, O.en
dc.creatorCiomaga, V.-C.en
dc.creatorChrétien, P.en
dc.date.accessioned2019-05-06T12:24:10Z
dc.date.available2019-05-06T12:24:10Z
dc.date.issued2011
dc.identifier.urihttp://gnosis.library.ucy.ac.cy/handle/7/48637
dc.description.abstractA substantial resistive switching of Li xCoO 2 mixed-conductor thin films is observed for the first time. The occurrence of possible bipolar switching in these oxide thin films is by current-voltage curves, investigated by conducting-probe atomic force microscopy (CP-AFM). The films are incorporated into an Au/Li xCoO 2/p++Si device and exhibit a significant resistive-switching process involving a ratio of over four orders of magnitude. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.en
dc.language.isoengen
dc.sourceAdvanced Materialsen
dc.subjectarticleen
dc.subjectchemistryen
dc.subjectMicroscopyen
dc.subjectSwitchingen
dc.subjectSwitching systemsen
dc.subjectAtomic force microscopyen
dc.subjectCobalten
dc.subjectCobalt compoundsen
dc.subjectoxideen
dc.subjectOxidesen
dc.subjectelectric conductivityen
dc.subjectAtomic Forceen
dc.subjectcobalt oxideen
dc.subjectCobalt oxidesen
dc.subjectCurrent voltage curveen
dc.subjectElectric Impedanceen
dc.subjectFour-orderen
dc.subjectimpedanceen
dc.subjectlithiumen
dc.subjectmixed conductorsen
dc.subjectOxide thin filmsen
dc.subjectresistive switchingen
dc.subjectthin filmsen
dc.titleResistive switching phenomena in Li xCoO 2 thin filmsen
dc.typeinfo:eu-repo/semantics/article
dc.identifier.doi10.1002/adma.201101800
dc.description.volume23
dc.description.startingpage4141
dc.description.endingpage4145
dc.author.facultyΠολυτεχνική Σχολή / Faculty of Engineering
dc.author.departmentΤμήμα Μηχανικών Μηχανολογίας και Κατασκευαστικής / Department of Mechanical and Manufacturing Engineering
dc.type.uhtypeArticleen
dc.contributor.orcidGiapintzakis, John [0000-0002-7277-2662]
dc.description.totalnumpages4141-4145


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