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dc.contributor.authorOthonos, A.en
dc.contributor.authorZervos, Matthewen
dc.contributor.authorTsokkou, D.en
dc.creatorOthonos, A.en
dc.creatorZervos, Matthewen
dc.creatorTsokkou, D.en
dc.date.accessioned2019-05-06T12:24:15Z
dc.date.available2019-05-06T12:24:15Z
dc.date.issued2009
dc.identifier.urihttp://gnosis.library.ucy.ac.cy/handle/7/48673
dc.description.abstractWe have studied carrier dynamics in In 2O 3 nanocrystals grown on a quartz substrate using chemical vapor deposition. Transient differential absorption measurements have been employed to investigate the relaxation dynamics of photo-generated carriers in In 2O 3 nanocrystals. Intensity measurements reveal that Auger recombination plays a crucial role in the carrier dynamics for the carrier densities investigated in this study. A simple differential equation model has been utilized to simulate the photo-generated carrier dynamics in the nanocrystals and to fit the fluence-dependent differential absorption measurements. The average value of the Auger coefficient obtained from fitting to the measurements was γ = 5.9 ± 0.4 × 10 -31 cm 6 s -1. Similarly the average relaxation rate of the carriers was determined to be approximately τ = 110 ± 10 ps. Time-resolved measurements also revealed 25 ps delay for the carriers to reach deep traps states which have a subsequent relaxation time of approximately 300 ps.en
dc.language.isoengen
dc.sourceNanoscale Research Lettersen
dc.subjectDynamicsen
dc.subjectAbsorptionen
dc.subjectOxide mineralsen
dc.subjectQuartzen
dc.subjectCarrier dynamicsen
dc.subjectIntensity measurementsen
dc.subjectPhotogenerated carriersen
dc.subjectRelaxation processesen
dc.subjectAbsorption spectroscopyen
dc.subjectAuger recombinationen
dc.subjectAugersen
dc.subjectTime resolved measurementen
dc.subjectRelaxation dynamicsen
dc.subjectFemtosecond differential absorption spectroscopyen
dc.subjectAuger coefficienten
dc.subjectAverage valuesen
dc.subjectCarrier densityen
dc.subjectDeep trapsen
dc.subjectDifferential absorptionen
dc.subjectDifferential equation modelen
dc.subjectFemtoseconden
dc.subjectFluenceen
dc.subjectIn <sub>2</sub>O <sub>3</sub> nanocrystalsen
dc.subjectIn 2O 3 nanocrystalsen
dc.subjectNanocrystalsen
dc.subjectQuartz substrateen
dc.subjectRelaxation ratesen
dc.titleFemtosecond carrier dynamics in In 2O 3 nanocrystalsen
dc.typeinfo:eu-repo/semantics/article
dc.identifier.doi10.1007/s11671-009-9275-0
dc.description.volume4
dc.description.startingpage526
dc.description.endingpage531
dc.author.facultyΠολυτεχνική Σχολή / Faculty of Engineering
dc.author.departmentΤμήμα Μηχανικών Μηχανολογίας και Κατασκευαστικής / Department of Mechanical and Manufacturing Engineering
dc.type.uhtypeArticleen
dc.contributor.orcidZervos, Matthew [0000-0002-6321-233X]
dc.description.totalnumpages526-531


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