Carrier mapping in thermoelectric materials
AuthorPolymeris, G. S.
Stefanaki, E. C.
Paraskevopoulos, K. M.
Kanatzidis, M. G.
PublisherAffiliation: Physics Department, Aristotle University of Thessaloniki, GR- 54124, Thessaloniki, Greece
Affiliation: Department of Mechanical and Manufacturing Engineering, University of Cyprus, 1678 Nicosia, Cyprus
Affiliation: Department of Chemistry, Northwestern University, 2145 North Sheridan Road, Evanston, IL 60208, United States
Correspondence Address: Physics Department, Aristotle University of Thessaloniki, GR- 54124, Thessaloniki, Greece
SourceMaterials Research Society Symposium Proceedings
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The application of micro-fourier transform infrared (FT1R) mapping analysis to thermoelectric materials towards identification of doping inhomogeneities is described. Micro-FTIR, in conjunction with fitting, is used as analytical tool for probing carrier content gradients. The plasmon frequency ωp 2 was studied as potential effective probe for carrier inhomogeneity and consequently doping differentiation based on its dependence of the carrier concentration. The method was applied to PbTe-, PbSe- and Mg2Si- based thermoelectric materials. © 2013 Materials Research Society.