dc.contributor.author | Zervos, Matthew | en |
dc.creator | Zervos, Matthew | en |
dc.date.accessioned | 2019-05-06T12:24:51Z | |
dc.date.available | 2019-05-06T12:24:51Z | |
dc.date.issued | 2014 | |
dc.identifier.uri | http://gnosis.library.ucy.ac.cy/handle/7/48951 | |
dc.description.abstract | The electronic sub-band structure of InAs/InP/InAs/InP/InAs core-shell nanowire resonant tunneling diodes has been investigated in the effective mass approximation by varying the core radius and the thickness of the InP barriers and InAs shells. A top-hat, double-barrier potential profile and optimal energy configuration are obtained for core radii and surface shells >10 nm, InAs middle shells <10 nm, and 5 nm InP barriers. In this case, two sub-bands exist above the Fermi level in the InAs middle shell which belongs to the m = 0 and m = 1 ladder of states that have similar wave functions and energies. On the other hand, the lowest m = 0 sub-band in the core falls below the Fermi level but the m = 1 states do not contribute to the current transport since they reside energetically well above the Fermi level. We compare the case of GaAs/AlGaAs/GaAs/AlGaAs/GaAs which may conduct current with smaller applied voltages due to the larger effective mass of electrons in GaAs and discuss the need for doping. © 2014, Zervos | en |
dc.description.abstract | licensee Springer. | en |
dc.language.iso | eng | en |
dc.source | Nanoscale Research Letters | en |
dc.subject | Fermi level | en |
dc.subject | Nanowires | en |
dc.subject | Electronic properties | en |
dc.subject | Gallium arsenide | en |
dc.subject | Core-shell | en |
dc.subject | Semiconducting gallium | en |
dc.subject | Applied voltages | en |
dc.subject | Core-shell nanowires | en |
dc.subject | Current transport | en |
dc.subject | Double barriers | en |
dc.subject | Effective mass | en |
dc.subject | Effective mass approximation | en |
dc.subject | III-V | en |
dc.subject | Optimal energy | en |
dc.subject | Resonant tunneling | en |
dc.subject | Resonant tunneling diodes | en |
dc.subject | Shells (structures) | en |
dc.subject | Wave functions | en |
dc.title | Electronic properties of core-shell nanowire resonant tunneling diodes | en |
dc.type | info:eu-repo/semantics/article | |
dc.identifier.doi | 10.1186/1556-276X-9-509 | |
dc.description.volume | 9 | |
dc.author.faculty | Πολυτεχνική Σχολή / Faculty of Engineering | |
dc.author.department | Τμήμα Μηχανικών Μηχανολογίας και Κατασκευαστικής / Department of Mechanical and Manufacturing Engineering | |
dc.type.uhtype | Article | en |
dc.contributor.orcid | Zervos, Matthew [0000-0002-6321-233X] | |
dc.gnosis.orcid | 0000-0002-6321-233X | |