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dc.contributor.authorZervos, Matthewen
dc.creatorZervos, Matthewen
dc.description.abstractThe electronic sub-band structure of InAs/InP/InAs/InP/InAs core-shell nanowire resonant tunneling diodes has been investigated in the effective mass approximation by varying the core radius and the thickness of the InP barriers and InAs shells. A top-hat, double-barrier potential profile and optimal energy configuration are obtained for core radii and surface shells >10 nm, InAs middle shells <10 nm, and 5 nm InP barriers. In this case, two sub-bands exist above the Fermi level in the InAs middle shell which belongs to the m = 0 and m = 1 ladder of states that have similar wave functions and energies. On the other hand, the lowest m = 0 sub-band in the core falls below the Fermi level but the m = 1 states do not contribute to the current transport since they reside energetically well above the Fermi level. We compare the case of GaAs/AlGaAs/GaAs/AlGaAs/GaAs which may conduct current with smaller applied voltages due to the larger effective mass of electrons in GaAs and discuss the need for doping. © 2014, Zervosen
dc.description.abstractlicensee Springer.en
dc.sourceNanoscale Research Lettersen
dc.subjectFermi levelen
dc.subjectElectronic propertiesen
dc.subjectGallium arsenideen
dc.subjectSemiconducting galliumen
dc.subjectApplied voltagesen
dc.subjectCore-shell nanowiresen
dc.subjectCurrent transporten
dc.subjectDouble barriersen
dc.subjectEffective massen
dc.subjectEffective mass approximationen
dc.subjectOptimal energyen
dc.subjectResonant tunnelingen
dc.subjectResonant tunneling diodesen
dc.subjectShells (structures)en
dc.subjectWave functionsen
dc.titleElectronic properties of core-shell nanowire resonant tunneling diodesen
dc.description.volume9Πολυτεχνική Σχολή / Faculty of EngineeringΤμήμα Μηχανικών Μηχανολογίας και Κατασκευαστικής / Department of Mechanical and Manufacturing Engineering
dc.contributor.orcidZervos, Matthew [0000-0002-6321-233X]

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